- Тактовая частота
- Формат памяти
- Тип памяти
- Объем памяти
-
- Рабочая температура
- Тип корпуса
- Package / Case
- Время доступа
- Интерфейс
- Время цикла записи - слово, страница
- Серия
| Наименование | Описание | Производитель
|
Вид монтажа
|
Формат памяти
|
Тактовая частота
|
Тип памяти
|
Объем памяти
|
Напряжение питания
|
Технология
|
Рабочая температура
|
Тип корпуса
|
Package / Case
|
Время доступа
|
Интерфейс
|
Время цикла записи - слово, страница
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT53E384M32D2DS-053 AIT:E TR | IC DRAM 12GBIT 1.866GHZ 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 12Gb (384M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 95°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | Automotive, AEC-Q100 | |||
| MT53D512M64D8TZ-053 WT:B TR | IC DRAM 32GBIT 1866MHZ | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 32Gb (512M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
| MT53E1G32D4NQ-053 WT:E TR | LPDDR4 32G 1GX32 FBGA WT QDP | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 32Gb (1G x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
| MT53D1024M64D8PM-053 WT:D | IC DRAM 64GBIT 1866MHZ | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 64Gb (1G x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
| MT53D384M32D2DS-053 XT:E | IC DRAM 12GBIT 1866MHZ 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 12Gb (384M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 105°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | ||||
| MT53D1024M32D4DT-053 WT:D | IC DRAM 32GBIT 1866MHZ 200VFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 32Gb (1G x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-VFBGA (10x14.5) | 200-VFBGA | ||||
| MT53D1024M64D8NW-053 WT ES:D | IC DRAM 64GBIT 1866MHZ 432VFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 64Gb (1G x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 432-VFBGA (15x15) | 432-VFBGA | ||||
| MT53B384M32D2NP-053 WT:B TR | IC DRAM 12GBIT 1866MHZ 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 12Gb (384M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | ||||
| MT53D768M32D4BD-053 WT:C | IC DRAM 24GBIT 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 24Gb (768M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
| MT53E128M32D2DS-053 WT:A TR | IC DRAM 4GBIT 1.866GHZ 200WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 4Gb (128M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | ||||
| MT53D1G64D8SQ-053 WT ES:E TR | IC DRAM 64GBIT 1866MHZ 556VFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 64Gb (1G x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 556-VFBGA (12.4x12.4) | 556-VFBGA | ||||
| MT53B768M32D4NQ-053 WT:B | IC DRAM 24GBIT 1866MHZ 200VFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 24Gb (768M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | 200-VFBGA (10x14.5) | 200-VFBGA | ||||
| MT53E128M32D2DS-053 IT:A TR | LPDDR4 4G 128MX32 WFBGA | Micron Technology Inc. | Surface Mount | DRAM | 1.866GHz | Volatile | 4Gb (128M x 32) | 1.1V | SDRAM - Mobile LPDDR4 | -40°C ~ 95°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | ||||
| MT53B384M64D4TX-053 WT:B | IC DRAM 24GBIT 1866MHZ FBGA | Micron Technology Inc. | DRAM | 1.866GHz | Volatile | 24Gb (384M x 64) | 1.1V | SDRAM - Mobile LPDDR4 | -30°C ~ 85°C (TC) | |||||||
| W66CM2NQUAGJ | 4GB LPDDR4X, DDP, X32, 1866MHZ, | Winbond Electronics | Surface Mount | DRAM | 1.866GHz | Volatile | 4Gb (128M x 32) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | SDRAM - Mobile LPDDR4X | -40°C ~ 105°C (TC) | 200-WFBGA (10x14.5) | 200-WFBGA | 3.5ns | LVSTL_11 | 18ns |
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