Найдено: 114
Наименование Описание Производитель
Package / Case
Напряжение стабилизации
Имеданс (Макс) (Zzt)
Мощность - Макс.
Вид монтажа
Допуск
Тип корпуса
Ток утечки
MTZJT-7227C DIODE ZENER 27V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 27V 45 Ohms 500mW Through Hole ±3% MSD 200nA @ 21V
MTZJT-7230A DIODE ZENER 30V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 30V 55 Ohms 500mW Through Hole ±3% MSD 200nA @ 23V
MTZJT-7710C DIODE ZENER 10V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 10V 20 Ohms 500mW Through Hole ±3% MSD 200nA @ 7V
MTZJT-7212B DIODE ZENER 12V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 12V 25 Ohms 500mW Through Hole ±3% MSD 200nA @ 9V
MTZJT-7211B DIODE ZENER 11V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 11V 20 Ohms 500mW Through Hole ±3% MSD 200nA @ 8V
MTZJT-7213B DIODE ZENER 13V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 13V 25 Ohms 500mW Through Hole ±3% MSD 200nA @ 10V
MTZJT-722.0B DIODE ZENER 2V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 2V 500mW Through Hole ±3% MSD
MTZJT-773.3A DIODE ZENER 3.3V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 3.3V 500mW Through Hole ±3% MSD
MTZJT-777.5C DIODE ZENER 7.5V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 7.5V 20 Ohms 500mW Through Hole ±3% MSD 500nA @ 4V
MTZJT-774.3C DIODE ZENER 4.3V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 4.3V 100 Ohms 500mW Through Hole ±3% MSD 5µA @ 1V
MTZJT-7724D DIODE ZENER 24V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 24V 35 Ohms 500mW Through Hole ±3% MSD 200nA @ 19V
MTZJT-7230B DIODE ZENER 30V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 30V 55 Ohms 500mW Through Hole ±3% MSD 200nA @ 23V
MTZJT-723.0B DIODE ZENER 3V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 3V 500mW Through Hole ±3% MSD
MTZJT-724.3B DIODE ZENER 4.3V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 4.3V 100 Ohms 500mW Through Hole ±3% MSD 5µA @ 1V
MTZJT-7211C DIODE ZENER 11V 500MW MSD Rohm Semiconductor DO-204AG, DO-34, Axial 11V 20 Ohms 500mW Through Hole ±3% MSD 200nA @ 8V