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- Конфигурация
- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
Наименование | Описание | Производитель
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Package / Case
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Напряжение стабилизации
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Имеданс (Макс) (Zzt)
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Мощность - Макс.
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Вид монтажа
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Допуск
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Тип корпуса
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Рабочая температура
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Ток утечки
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Серия
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1N5339B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 5.6V | 1 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 10µA @ 2V | 1N5338B |
1N5368B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 47V | 25 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 35.8V | 1N5338B |
1N5361B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 27V | 5 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 20.6V | 1N5338B |
1N5360B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 25V | 4 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 19V | 1N5338B |
1N5364B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 33V | 10 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 25.1V | 1N5338B |
1N5367B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 43V | 20 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 32.7V | 1N5338B |
1N5351B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 14V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 1µA @ 10.6V | 1N5338B |
1N5353B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 16V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 1µA @ 12.2V | 1N5338B |
1N5366B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 39V | 14 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 29.7V | 1N5338B |
1N5344B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 8.2V | 2 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 10µA @ 6.2V | 1N5338B |
1N5349B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 12V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 2µA @ 9.1V | 1N5338B |
1N5342B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 6.8V | 1 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 10µA @ 5.2V | 1N5338B |
1N5341B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 6.2V | 1 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 10µA @ 3V | 1N5338B |
1N5343B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 7.5V | 2 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 10µA @ 5.7V | 1N5338B |
1N5347B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 10V | 2 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 5µA @ 7.6V | 1N5338B |
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