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- Конфигурация
- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
Наименование | Описание | Производитель
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Package / Case
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Напряжение стабилизации
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Имеданс (Макс) (Zzt)
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Мощность - Макс.
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Вид монтажа
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Допуск
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Тип корпуса
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Рабочая температура
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Ток утечки
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Серия
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1N5365B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 36V | 11 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 27.4V | 1N5338B |
1N5355B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 18V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 13.7V | 1N5338B |
1N5358B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 22V | 4 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 16.7V | 1N5338B |
1N5356B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 19V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 14.4V | 1N5338B |
1N5346B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 9.1V | 2 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 7.5µA @ 6.9V | 1N5338B |
1N5354B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 17V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 12.9V | 1N5338B |
1N5357B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 20V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 15.2V | 1N5338B |
1N5363B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 30V | 8 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 22.8V | 1N5338B |
1N5359B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 24V | 4 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 18.2V | 1N5338B |
1N5345B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 8.7V | 2 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 10µA @ 6.6V | 1N5338B |
1N5350B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 13V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 1µA @ 9.9V | 1N5338B |
1N5362B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 28V | 6 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 500nA @ 21.2V | 1N5338B |
1N5338B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 5.1V | 2 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 10µA @ 1V | 1N5338B |
1N5340B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 6V | 1 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 10µA @ 3V | 1N5338B |
1N5348B_R2_00001 | SILICON ZENER DIODE | Panjit International Inc. | DO-201AE, Axial | 11V | 3 Ohms | 5W | Through Hole | ±5% | DO-201AE | -55°C ~ 150°C (TJ) | 5µA @ 8.4V | 1N5338B |
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