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- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Тип диода
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Тип корпуса
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Рабочая температура
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Ток, макс.
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Емкость @ Vr, F
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Рассеиваемая мощность (Макс)
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Сопротивление @ If, F
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GC4721-00 | SI LIMITER NON HERMETIC CHIP | Microchip Technology | Die | 120V | PIN - Single | Chip | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 5W | 1.5Ohm @ 10mA, 100MHz | |
GC4701-01 | SI LIMITER NON HERMETIC CHIP W L | Microchip Technology | Die | 20V | PIN - Single | Chip | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 2W | 1.5Ohm @ 10mA, 100MHz | |
GC4272-00 | SI PIN NON HERMETIC CHIP | Microchip Technology | Die | 70V | PIN - Single | Chip | -55°C ~ 150°C | 10mA | 0.2pF @ 10V, 1MHz | 800mOhm @ 20mA, 1GHz | |
GC6001-150A | SI NOISE NON HERMETIC EPSM SMT | Microchip Technology | Die | 10V | Standard - Single | Chip | -55°C ~ 150°C | 0.5pF @ 6V, 1MHz | |||
GC4712-150A/TR | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 45V | PIN - Single | Chip | -55°C ~ 150°C | 0.3pF @ 6V, 1MHz | 4W | 1.2Ohm @ 10mA, 100MHz | |
MP61012-P00 | GAAS PIN NON HERMETIC CHIP | Microchip Technology | Die | 50V | PIN - Single | Chip | -55°C ~ 175°C | 50mA | 0.35pF @ 10V, 1MHz | 800mOhm @ 20mA, 1GHz | |
LSP1011-454-2 | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 200V | PIN - Single | Chip | -65°C ~ 125°C | 1A | 0.35pF @ 50V, 1MHz | 500mW | 2Ohm @ 100mA, 100MHz |
GC4220-00 | SI PIN NON HERMETIC CHIP | Microchip Technology | Die | 250V | PIN - Single | Chip | -55°C ~ 150°C | 10mA | 0.06pF @ 10V, 1MHz | 2.5Ohm @ 20mA, 1GHz | |
LSP1011-150E | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 200V | PIN - Single | Chip | -65°C ~ 125°C | 1A | 0.35pF @ 50V, 1MHz | 500mW | 2Ohm @ 100mA, 100MHz |
GC4741-01 | SI LIMITER NON HERMETIC CHIP W L | Microchip Technology | Die | 30V | PIN - Single | Chip | -55°C ~ 150°C | 0.1pF @ 6V, 1MHz | 3W | 2Ohm @ 10mA, 100MHz | |
MS8151-P2613 | GAAS SCHOTTKY NON HERMETIC FLIP | Microchip Technology | Die | 3V | Schottky - Single | Chip | -55°C ~ 125°C | 15mA | 60pF @ 0V, 1MHz | 9Ohm @ 10mA, 100MHz | |
GC4722-00 | SI LIMITER NON HERMETIC CHIP | Microchip Technology | Die | 120V | PIN - Single | Chip | -55°C ~ 150°C | 0.3pF @ 6V, 1MHz | 10W | 1Ohm @ 10mA, 100MHz | |
GC6002-450A | SI NOISE NON HERMETIC EPSM SMT | Microchip Technology | Die | 14V | PIN - Single | Chip | -55°C ~ 150°C | 1pF @ 6V, 1MHz | |||
GC4321-01 | SI NIP NON HERMETIC CHIP W LEAD | Microchip Technology | Die | 200V | PIN - Single | Chip | -55°C ~ 150°C | 0.1pF @ 10V, 1MHz | 1.2Ohm @ 20mA, 1GHz | ||
GC6003-150A | SI NOISE NON HERMETIC EPSM SMT | Microchip Technology | Die | 18V | Standard - Single | Chip | -55°C ~ 150°C | 1.5pF @ 6V, 1MHz |
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