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- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Тип диода
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Тип корпуса
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Рабочая температура
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Ток, макс.
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Емкость @ Vr, F
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Рассеиваемая мощность (Макс)
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Сопротивление @ If, F
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GC4431-01 | SI PIN NON HERMETIC CHIP W LEAD | Microchip Technology | Die | 300V | PIN - Single | Chip | -55°C ~ 150°C | 50mA | 0.25pF @ 50V, 1MHz | 1.2Ohm @ 100mA, 100MHz | |
GC4225-00 | SI PIN NON HERMETIC CHIP | Microchip Technology | Die | 250V | PIN - Single | Chip | -55°C ~ 150°C | 10mA | 0.5pF @ 10V, 1MHz | 600mOhm @ 20mA, 1GHz | |
GC4225-150B | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 250V | PIN - Single | Chip | -55°C ~ 150°C | 10mA | 0.5pF @ 10V, 1MHz | 600mOhm @ 20mA, 1GHz | |
GC4731-00 | SI LIMITER NON HERMETIC CHIP | Microchip Technology | Die | 15V | PIN - Single | Chip | -55°C ~ 150°C | 0.1pF @ 6V, 1MHz | 2W | 2Ohm @ 10mA, 100MHz | |
GC4215-150B | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 100V | PIN - Single | Chip | -55°C ~ 150°C | 10mA | 0.5pF @ 10V, 1MHz | 350mOhm @ 20mA, 1GHz | |
GC4731-150C | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 15V | PIN - Single | Chip | -55°C ~ 150°C | 0.1pF @ 6V, 1MHz | 2W | 2Ohm @ 10mA, 100MHz | |
GC6002-150A/TR | SI NOISE NON HERMETIC EPSM SMT | Microchip Technology | Die | 14V | PIN - Single | Chip | -55°C ~ 150°C | 1pF @ 6V, 1MHz | |||
GC4210-154-2 | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 100V | PIN - Single | Chip | -55°C ~ 150°C | 10mA | 0.06pF @ 10V, 1MHz | 1.5Ohm @ 20mA, 1GHz | |
GC4722-150A | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 120V | PIN - Single | Chip | -55°C ~ 150°C | 0.3pF @ 6V, 1MHz | 10W | 1Ohm @ 10mA, 100MHz | |
GC4711-00 | SI LIMITER NON HERMETIC CHIP | Microchip Technology | Die | 45V | PIN - Single | Chip | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 3W | 1.5Ohm @ 10mA, 100MHz | |
GC4701-150A | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 20V | PIN - Single | Chip | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 2W | 1.5Ohm @ 10mA, 100MHz | |
MPS4102-013S | SI PIN NON HERMETIC CHIP | Microchip Technology | Die | 80V | PIN - Single | Chip | -55°C ~ 150°C | 100mA | 0.02pF @ 50V, 1GHz | 3W | 2.5Ohm @ 100mA, 1GHz |
GC4722-150A/TR | SI LIMITER NON HERMETIC EPSM SMT | Microchip Technology | Die | 120V | PIN - Single | Chip | -55°C ~ 150°C | 0.3pF @ 6V, 1MHz | 10W | 1Ohm @ 10mA, 100MHz | |
MS8150-P2613 | GAAS SCHOTTKY NON HERMETIC FLIP | Microchip Technology | Die | 3V | PIN - Single | Chip | -55°C ~ 125°C | 15mA | |||
GC4732-00 | SI LIMITER NON HERMETIC CHIP | Microchip Technology | Die | 15V | PIN - Single | Chip | -55°C ~ 150°C | 0.15pF @ 6V, 1MHz | 3W | 1.5Ohm @ 10mA, 100MHz |
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