- Производитель
- Обратное пиковое напряжение
- Тип корпуса
-
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Тип диода
|
Тип корпуса
|
Рабочая температура
|
Ток, макс.
|
Емкость @ Vr, F
|
Рассеиваемая мощность (Макс)
|
Сопротивление @ If, F
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UPP1002E3/TR13 | RF DIODE PIN 100V 2.5W DO216 | Microchip Technology | DO-216AA | 100V | PIN - Single | DO-216 | -55°C ~ 150°C (TJ) | 1.6pF @ 100V, 1MHz | 2.5W | 1Ohm @ 10mA, 100MHz | POWERMITE® | |
| MS8150-6498 | GAAS SCHOTTKY NON HERMETIC FLIP | Microchip Technology | Die | Chip | ||||||||
| UPP1002/TR13 | RF DIODE PIN 100V 2.5W DO216 | Microchip Technology | DO-216AA | 100V | PIN - Single | DO-216 | -55°C ~ 150°C (TJ) | 1.6pF @ 100V, 1MHz | 2.5W | 1Ohm @ 10mA, 100MHz | POWERMITE® | |
| UM7006D | SI PPIN HERMETIC STUD | Microchip Technology | Stud | 600V | PIN - Single | -65°C ~ 175°C | 0.9pF @ 100V, 1MHz | 7.5W | 1Ohm @ 100mA, 100MHz | |||
| GC9941-TSR | SI SCHOTTKY NON HERMETIC BEAM LE | Microchip Technology | 3-SMD, Flat Lead | 4V | PIN - Single | -55°C ~ 150°C | 0.1pF @ 0V, 1MHz | 20Ohm @ 5mA, 1MHz | ||||
| UX9401F/TR | SI PPIN HEMETIC MELF | Microchip Technology | 2-SMD | 50V | PIN - Single | -65°C ~ 175°C | 0.9pF @ 50V, 1MHz | 4W | 750mOhm @ 50mA, 100MHz | |||
| UM6606A | SI PPIN HERMETIC SEAL | Microchip Technology | Axial | 800V | PIN - Single | Axial | 0.4pF @ 100V, 1MHz | 6W | 2.5Ohm @ 100mA, 100MHz | |||
| GC4432-M1/TR | SI PIN HERMETIC MELF | Microchip Technology | 1208 (3020 Metric) | 300V | PIN - Single | M1 | -55°C ~ 150°C | 50mA | 0.5pF @ 50V, 1MHz | 1Ohm @ 100mA, 100MHz | ||
| LSP1000-150A | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 35V | PIN - Single | Chip | -65°C ~ 125°C | 1A | 0.28pF @ 5V, 1MHz | 500mW | 2.5Ohm @ 5mA, 100MHz | |
| GC4225-150B/TR | SI PIN NON HERMETIC EPSM SMT | Microchip Technology | Die | 250V | PIN - Single | Chip | -55°C ~ 150°C | 10mA | 0.5pF @ 10V, 1MHz | 600mOhm @ 20mA, 1GHz | ||
| UPP1004E3/TR7 | RF DIODE PIN 100V 2.5W DO216 | Microchip Technology | DO-216AA | 100V | PIN - Single | DO-216 | -55°C ~ 150°C (TJ) | 1.6pF @ 100V, 1MHz | 2.5W | 1Ohm @ 10mA, 100MHz | POWERMITE® | |
| GC4531-00 | SI NIP NON HERMETIC CHIP | Microchip Technology | Die | 300V | PIN - Single | Chip | -55°C ~ 150°C | 0.25pF @ 50V, 1MHz | 1.2Ohm @ 100mA, 100MHz | |||
| MG49870-30 | GAAS GUNN EPI UP HERMETIC PILL | Microchip Technology | Stud | |||||||||
| HUM2020B | SI PPIN HERMETIC GLASS AXIAL | Microchip Technology | Axial | 2000V | PIN - Single | Axial | -65°C ~ 175°C | 4pF @ 100V, 1MHz | 13W | 200mOhm @ 500mA, 4MHz | ||
| GC4211-00 | SI PIN NON HERMETIC CHIP | Microchip Technology | Die | 100V | PIN - Single | Chip | -55°C ~ 150°C | 10mA | 0.1pF @ 10V, 1MHz | 1Ohm @ 20mA, 1GHz |
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