- Производитель
- Обратное пиковое напряжение
- Тип корпуса
-
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
|
Тип диода
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Тип корпуса
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Рабочая температура
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Ток, макс.
|
Емкость @ Vr, F
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Рассеиваемая мощность (Макс)
|
Сопротивление @ If, F
|
Серия
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BAT17-06WE6327 | RF MIXER/DETECTOR SCHOTTKY DIODE | Infineon Technologies | ||||||||||
BA595E6327 | BA595 - PIN DIODE | Infineon Technologies | SC-76, SOD-323 | 50V | PIN - Single | PG-SOD323-2-1 | 150°C (TJ) | 50mA | 0.6pF @ 10V, 1MHz | Automotive, AEC-Q101 | ||
BAR6306WE6327HTSA1 | RF DIODE PIN 50V 250MW SOT323-3 | Infineon Technologies | SC-70, SOT-323 | 50V | PIN - 1 Pair Common Anode | PG-SOT323 | 150°C (TJ) | 100mA | 0.3pF @ 5V, 1MHz | 250mW | 1Ohm @ 10mA, 100MHz | |
BA892H6327XTSA1 | RF DIODE STANDARD 35V SCD80 | Infineon Technologies | SC-80 | 35V | Standard - Single | SCD-80 | 150°C (TJ) | 100mA | 1.1pF @ 3V, 1MHz | 500mOhm @ 10mA, 100MHz | ||
BAT2402LSE6327XTSA1 | DIODE SCHOTTKY 4V 100MW TSSLP-2 | Infineon Technologies | 0201 (0603 Metric) | 4V | Schottky - Single | PG-TSSLP-2-1 | 150°C (TJ) | 110mA | 0.23pF @ 0V, 1MHz | 100mW | ||
BAR8802LRHE6327XTSA1 | RF DIODE PIN 80V 250MW TSLP-2 | Infineon Technologies | SOD-882 | 80V | PIN - Single | PG-TSLP-2-7 | 150°C (TJ) | 100mA | 0.4pF @ 1V, 1MHz | 250mW | 600mOhm @ 10mA, 100MHz | |
BAT63-07WE6327 | MIXER DIODE, LOW BARRIER | Infineon Technologies | SC-82A, SOT-343 | 3V | Schottky - 2 Independent | PG-SOT343-4 | 150°C (TJ) | 100mA | 0.85pF @ 0.2V, 1MHz | 100mW | ||
BAR6402ELE6327XTMA1 | RF DIODE PIN 150V 250MW TSLP2-19 | Infineon Technologies | 0402 (1006 Metric) | 150V | PIN - Single | PG-TSLP-2-19 | 150°C (TJ) | 100mA | 0.35pF @ 20V, 1MHz | 250mW | 1.35Ohm @ 100mA, 100MHz | |
BAR 63-06W H6327 | RF PIN DIODE > ANTENNA SWITCH | Infineon Technologies | SC-70, SOT-323 | 50V | PIN - 1 Pair Common Anode | SOT-323 | 150°C (TJ) | 100mA | 0.3pF @ 5V, 1MHz | 250mW | 1Ohm @ 10mA, 100MHz | |
BAT68-06E6327 | RF MIXER/DETECTOR SCHOTTKY DIODE | Infineon Technologies | ||||||||||
BAR 90-081LS E6327 | RF DIODE PIN 80V 150MW TSSLP-8-1 | Infineon Technologies | 8-XFDFN | 80V | PIN - 4 Independent | TSSLP-8-1 | 150°C (TJ) | 100mA | 0.35pF @ 1V, 1MHz | 150mW | 800mOhm @ 10mA, 100MHz | |
BAT1502ELSE6327XTSA1 | RF DIODES | Infineon Technologies | ||||||||||
BAR 63-02W E6127 | RF DIODE PIN 50V 250MW SCD80 | Infineon Technologies | SC-80 | 50V | PIN - Single | SCD-80 | 150°C (TJ) | 100mA | 0.3pF @ 5V, 1MHz | 250mW | 1Ohm @ 10mA, 100MHz | |
BAR6503WE6327HTSA1 | RF DIODE PIN 30V 250MW SOD323-2 | Infineon Technologies | SC-76, SOD-323 | 30V | PIN - Single | PG-SOD323-2 | 150°C (TJ) | 100mA | 0.8pF @ 3V, 1MHz | 250mW | 900mOhm @ 10mA, 100MHz | |
BAT6202LE6327XTMA1 | DIODE SCHOTTKY 40V 100MW TSLP-2 | Infineon Technologies | SOD-882 | 40V | Schottky - Single | PG-TSLP-2-1 | 150°C (TJ) | 20mA | 0.6pF @ 0V, 1MHz | 100mW |
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