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- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S3D10065E | DIODE SCHOTTKY SILICON CARBIDE S | SMC Diode Solutions | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A | Silicon Carbide Schottky | Surface Mount | DPAK | No Recovery Time > 500mA (Io) | 20µA @ 650V | 621pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
| SDURD1060 | DIODE GEN PURP 600V DPAK | SMC Diode Solutions | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A | Standard | Surface Mount | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 600V | 1.66V @ 10A | 600V | 35ns | -55°C ~ 150°C | |
| MBR1060S | DIODE SCHOTTKY 60V 10A TO277B | SMC Diode Solutions | TO-277, 3-PowerDFN | 10A | Schottky | Surface Mount | TO-277B | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 850pF @ 5V, 1MHz | 630mV @ 10A | 60V | -55°C ~ 150°C | |
| S3D10065G | DIODE SCHOTTKY SILICON CARBIDE S | SMC Diode Solutions | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10A | Silicon Carbide Schottky | Surface Mount | D2PAK | No Recovery Time > 500mA (Io) | 20µA @ 650V | 621pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
| SDURK10Q60 | 600V FRD,10A,PACKAGE ITO-220AC-2 | SMC Diode Solutions | TO-220-2 Full Pack, Isolated Tab | 10A | Standard | Through Hole | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 600V | 2.3V @ 10A | 600V | 25ns | -55°C ~ 150°C | |
| SDURD1060BTR | DIODE GEN PURP 600V DPAK | SMC Diode Solutions | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A | Standard | Surface Mount | DPAK | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 2.5V @ 10A | 600V | 35ns | -55°C ~ 150°C | |
| MURF1060 | DIODE GEN PURP 600V 10A ITO220AC | SMC Diode Solutions | TO-220-2 Full Pack, Isolated Tab | 10A | Standard | Through Hole | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 600V | 2.2V @ 10A | 600V | 50ns | -55°C ~ 150°C | |
| SICRD101200 | DIODE SCHOTTKY SILICON CARBIDE S | SMC Diode Solutions | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10A | Silicon Carbide Schottky | Surface Mount | DPAK | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 640pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C |
| MBR1035 | 10A, 35V, TO-220AC, SCHOTTKY REC | SMC Diode Solutions | TO-220-2 | 10A | Schottky | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 35V | 750pF @ 5V, 1MHz | 840mV @ 10A | 35V | -55°C ~ 150°C | |
| ST1040STR | DIODE SCHOTTKY 40V 10A TO277B | SMC Diode Solutions | TO-277, 3-PowerDFN | 10A | Schottky | Surface Mount | TO-277B | Fast Recovery =< 500ns, > 200mA (Io) | 300µA @ 40V | 470mV @ 10A | 40V | -55°C ~ 150°C | ||
| ST1050S | DIODE SCHOTTKY 50V 10A TO277B | SMC Diode Solutions | TO-277, 3-PowerDFN | 10A | Schottky | Surface Mount | TO-277B | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 50V | 550mV @ 10A | 50V | -55°C ~ 150°C | ||
| 10TQ035 | 10A, 35V, TO-220AC, SCHOTTKY REC | SMC Diode Solutions | TO-220-2 | 10A | Schottky | Through Hole | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 35V | 750pF @ 5V, 1MHz | 570mV @ 10A | 35V | -55°C ~ 175°C |
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