- Производитель
- Средний выпрямленный ток (Io)
-
- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX1N3766 | DIODE GEN PURP 800V 35A DO203AB | Microsemi Corporation | DO-203AB, DO-5, Stud | 35A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 800V | 2.3V @ 500A | 800V | -65°C ~ 175°C | Military, MIL-PRF-19500/297 | ||||
| FST8145D | DIODE MODULE 45V | Microsemi Corporation | Module | Schottky | Chassis Mount | Module | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 45V | 530mV @ 40A | 45V | 1 Pair Series Connection | 40A | |||||
| S8-4150/TR7 | DIODE ARRAY GP 50V 400MA 8SOIC | Microsemi Corporation | 8-SOIC (0.154", 3.90mm Width) | Standard | Surface Mount | 8-SOIC | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 200mA | 50V | 4ns | -55°C ~ 150°C | 4 Independent | 400mA (DC) | |||
| JAN1N6625U | DIODE GEN PURP 1KV 1A A-MELF | Microsemi Corporation | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1000V | 1.75V @ 1A | 1000V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 | |||
| HSM190G/TR13 | DIODE SCHOTTKY 90V 1A DO215AA | Microsemi Corporation | DO-215AA, SMB Gull Wing | 1A | Schottky | Surface Mount | DO-215AA | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 90V | 840mV @ 1A | 90V | -55°C ~ 175°C | |||||
| JANTXV1N5614 | DIODE GEN PURP 200V 1A AXIAL | Microsemi Corporation | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | 200V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||||
| S4210F | RECTIFIER | Microsemi Corporation | |||||||||||||||
| JANTXV1N6075 | DIODE GEN PURP 150V 850MA AXIAL | Microsemi Corporation | A, Axial | 850mA | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 2.04V @ 9.4A | 150V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |||
| APT60D100SG | DIODE GEN PURP 1KV 60A D3 | Microsemi Corporation | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | 60A | Standard | Surface Mount | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 250µA @ 1000V | 2.5V @ 60A | 1000V | 280ns | -55°C ~ 175°C | ||||
| R20460 | RECTIFIER | Microsemi Corporation | |||||||||||||||
| JANTX1N5417 | DIODE GEN PURP 200V 3A AXIAL | Microsemi Corporation | B, Axial | 3A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 200V | 1.5V @ 9A | 200V | 150ns | -65°C ~ 175°C | Military, MIL-PRF-19500/411 | ||||
| UFS515G/TR13 | DIODE GEN PURP 150V 5A DO215AB | Microsemi Corporation | DO-215AB, SMC Gull Wing | 5A | Standard | Surface Mount | DO-215AB | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 150V | 950mV @ 5A | 150V | 30ns | -55°C ~ 175°C | ||||
| APT2X61D120J | DIODE MODULE 1.2KV 53A ISOTOP | Microsemi Corporation | SOT-227-4, miniBLOC | Standard | Chassis Mount | ISOTOP® | Fast Recovery =< 500ns, > 200mA (Io) | 250µA @ 1200V | 2.5V @ 60A | 1200V | 400ns | 2 Independent | 53A | ||||
| 689-3P | DIODE MODULE 300V 15A SMD | Microsemi Corporation | ND, Module | Standard | Chassis Mount | ND | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 300V | 1.2V @ 10A | 300V | 500ns | 150°C (Max) | 1 Pair Common Cathode | 15A | |||
| MS109/TR8 | DIODE SCHOTTKY 90V 1A DO204AL | Microsemi Corporation | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 90V | 810mV @ 1A | 90V | -55°C ~ 175°C |
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