• Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 598
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
HSM1100GE3/TR13 DIODE SCHOTTKY 100V 1A DO215AA Microchip Technology DO-215AA, SMB Gull Wing 1A Schottky Surface Mount DO-215AA Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 100V 840mV @ 1A 100V -55°C ~ 175°C
JANTXV1N5623US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, A 1A Standard Surface Mount D-5A Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 1V 15pF @ 12V, 1MHz 1.6V @ 3A 1000V 500ns -65°C ~ 175°C Military, MIL-PRF-19500/429
MSG140 DIODE SCHOTTKY 40V 1A DO204AL Microchip Technology DO-204AL, DO-41, Axial 1A Schottky Through Hole DO-204AL (DO-41) Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 40V 580mV @ 1A 40V -65°C ~ 150°C
JANTXV1N6761-1 RECTIFIER Microchip Technology DO-204AL, DO-41, Axial 1A Schottky Through Hole DO-41 Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 100V 70pF @ 5V, 1MHz 690mV @ 1A 100V -65°C ~ 150°C Military, MIL-PRF-19500/586
HSM180G/TR13 DIODE SCHOTTKY 80V 1A DO215AA Microchip Technology DO-215AA, SMB Gull Wing 1A Schottky Surface Mount DO-215AA Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 80V 840mV @ 1A 80V -55°C ~ 175°C
JAN1N5615 DIODE GEN PURP 200V 1A AXIAL Microchip Technology A, Axial 1A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 200V 1.6V @ 3A 200V 150ns -65°C ~ 175°C Military, MIL-PRF-19500/429
1N5615US DIODE GEN PURP 200V 1A D5A Microchip Technology SQ-MELF, A 1A Standard Surface Mount D-5A Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 200V 45pF @ 12V, 1MHz 1.6V @ 3A 200V 150ns -65°C ~ 175°C
UFS120JE3/TR13 DIODE GEN PURP 200V 1A DO214BA Microchip Technology DO-214BA 1A Standard Surface Mount DO-214BA Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 200V 950mV @ 1A 200V 30ns -55°C ~ 175°C
JANTX1N5619 DIODE GEN PURP 600V 1A AXIAL Microchip Technology A, Axial 1A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 600V 1.6V @ 3A 600V 250ns -65°C ~ 175°C Military, MIL-PRF-19500/429
JANTXV1N5618/TR STD RECTIFIER Microchip Technology A, Axial 1A Standard Through Hole Standard Recovery >500ns, > 200mA (Io) 500nA @ 600V 1.3V @ 3A 600V 2µs -65°C ~ 200°C Military, MIL-PRF-19500/427
JAN1N4248 DIODE GEN PURP 800V 1A AXIAL Microchip Technology A, Axial 1A Standard Through Hole Standard Recovery >500ns, > 200mA (Io) 1µA @ 800V 1.3V @ 3A 800V 5µs -65°C ~ 175°C Military, MIL-PRF-19500/286
JANTX1N4247/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1A Standard Through Hole Standard Recovery >500ns, > 200mA (Io) 1µA @ 600V 1.3V @ 3A 600V 5µs -65°C ~ 175°C Military, MIL-PRF-19500/286
1N4247 DIODE GEN PURP 600V 1A AXIAL Microchip Technology A, Axial 1A Standard Through Hole Standard Recovery >500ns, > 200mA (Io) 1µA @ 600V 1.3V @ 3A 600V 5µs -65°C ~ 175°C
JANTX1N5621/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 800V 20pF @ 12V, 1MHz 1.6V @ 3A 800V 150ns -65°C ~ 175°C Military, MIL-PRF-19500/429
JANS1N5615US RECTIFIER DIODE Microchip Technology SQ-MELF, A 1A Standard Surface Mount A, SQ-MELF Fast Recovery =< 500ns, > 200mA (Io) 1.6V @ 3A 200V 150ns -65°C ~ 175°C
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