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- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
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Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6759 | DIODE SCHOTTKY 60V 1A DO41 | Microchip Technology | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 60V | 690mV @ 1A | 60V | -65°C ~ 150°C | |||
| JAN1N6623US | DIODE GEN PURP 880V 1A D5A | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 10pF @ 10V, 1MHz | 1.55V @ 1A | 880V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 |
| CDLL5817/TR | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | DO-213AB, MELF | 1A | Schottky | Surface Mount | DO-213AB | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 20V | 600mV @ 1A | 20V | -55°C ~ 125°C | |||
| UFS180JE3/TR13 | DIODE GEN PURP 800V 1A DO214BA | Microchip Technology | DO-214BA | 1A | Standard | Surface Mount | DO-214BA | Fast Recovery =< 500ns, > 200mA (Io) | 20µA @ 800V | 1.2V @ 1A | 800V | 60ns | -55°C ~ 175°C | ||
| CDLL1A80 | DIODE SCHOTTKY 80V 1A DO213AB | Microchip Technology | DO-213AB, MELF | 1A | Schottky | Surface Mount | DO-213AB | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 80V | 690mV @ 1A | 80V | ||||
| UPS5817E3/TR13 | DIODE SCHOTTKY 20V 1A POWERMITE | Microchip Technology | DO-216AA | 1A | Schottky | Surface Mount | Powermite | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 105pF @ 5V, 1MHz | 450mV @ 1A | 20V | -55°C ~ 150°C | ||
| 1N5614/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | 200V | 2µs | -65°C ~ 200°C | |||
| CDLL1A50 | DIODE SCHOTTKY 50V 1A DO213AB | Microchip Technology | DO-213AB, MELF | 1A | Schottky | Surface Mount | DO-213AB | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 50V | 0.9pF @ 5V, 1MHz | 600mV @ 1A | 50V | |||
| JANTX1N5614/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | 200V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||
| JANTX1N5623 | DIODE GEN PURP 1KV 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 1000V | 15pF @ 12V, 1MHz | 1.6V @ 3A | 1000V | 500ns | -65°C ~ 175°C | Military, MIL-PRF-19500/429 | |
| JANS1N5617 | RECTIFIER DIODE | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 3A | 400V | 150ns | -65°C ~ 200°C | Military, MIL-PRF-19500/429 | ||
| JAN1N5621US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 800V | 1.6V @ 3A | 800V | 300ns | -65°C ~ 175°C | Military, MIL-PRF-19500/429 | |
| 1N5819UR-1 | 5A SCHOTTKY RECTIFIER | Microchip Technology | DO-213AB, MELF (Glass) | 1A | Schottky | Surface Mount | DO-213AB (MELF, LL41) | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 45V | 70pF @ 5V, 1MHz | 490mV @ 1A | 45V | -65°C ~ 150°C | ||
| 1N3611 | DIODE GEN PURP 200V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 200V | 1.1V @ 1A | 200V | -65°C ~ 175°C | ||||
| JANS1N6761-1 | SCHOTTKY DIODE | Microchip Technology | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 100V | 70pF @ 5V, 1MHz | 690mV @ 1A | 100V | -65°C ~ 150°C | Military, MIL-PRF-19500/586 |
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