• Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
  • 10
  • 15
  • 50
  • 100
Списком Таблицей
Найдено: 56
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
JANTX1N6627 DIODE GEN PURP 440V 1.75A AXIAL Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 2A 440V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTXV1N6627/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 2A 440V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6627/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 1.2A 440V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6628 DIODE GEN PURP 660V 1.75A AXIAL Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 600V 1.35V @ 1.2A 660V 30ns -65°C ~ 175°C Military, MIL-PRF-19500/590
JANTX1N6626/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 220V 40pF @ 10V, 1MHz 1.35V @ 2A 220V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6626US DIODE GEN PURP 220V 1.75A A-MELF Microchip Technology SQ-MELF, A 1.75A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 220V 40pF @ 10V, 1MHz 1.35V @ 2A 220V 30ns -65°C ~ 150°C
JANTXV1N6628US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 660V 40pF @ 10V, 1MHz 1.35V @ 2A 660V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTX1N6627US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 2A 440V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6626 DIODE GEN PURP 220V 1.75A AXIAL Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 220V 40pF @ 10V, 1MHz 1.35V @ 1.2A 220V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTXV1N6626US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 220V 40pF @ 10V, 1MHz 1.35V @ 2A 220V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6628/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.75A Standard Through Hole A-PAK Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 600V 1.35V @ 2A 600V 45ns -65°C ~ 150°C
JANTX1N6628US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 660V 40pF @ 10V, 1MHz 1.35V @ 2A 660V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTX1N6628U/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 600V 1.35V @ 2A 600V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6628US DIODE GEN PURP 660V 1.75A D5B Microchip Technology E-MELF 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 660V 40pF @ 10V, 1MHz 1.35V @ 2A 660V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6627/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 2A 440V 30ns -65°C ~ 150°C
  • 10
  • 15
  • 50
  • 100