|
IDW10G65C5FKSA1
|
DIODE SCHOTTKY 650V 10A TO247-3 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
400µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SDT10S60
|
DIODE SCHOTTKY 600V 10A TO220-2 |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
350µA @ 600V |
350pF @ 0V, 1MHz |
1.7V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIDC08D120H6X1SA1
|
DIODE GEN PURP 1.2KV 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Sawn on foil |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 1200V |
|
1.6V @ 10A |
1200V |
|
-55°C ~ 150°C |
|
|
SIDC06D60E6X1SA3
|
DIODE GEN PURP 600V 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Sawn on foil |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.25V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
IDW10S120FKSA1
|
DIODE SCHOTTKY 1200V 10A TO247-3 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
240µA @ 1200V |
580pF @ 1V, 1MHz |
1.8V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDW20G65C5BXKSA2
|
DIODE SCHOTTKY 650V 10A TO247-3 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
IDH10SG60C
|
IDH10SG60 - COOLSIC SCHOTTKY DIO |
Infineon Technologies |
TO-220-2 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO220-2-2 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
SIDC06D60E6X1SA1
|
DIODE SWITCHING 600V WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.25V @ 10A |
600V |
|
-55°C ~ 150°C |
|
|
IDL10G65C5XUMA2
|
DIODE SCHOTTKY 650V 10A VSON-4 |
Infineon Technologies |
4-PowerTSFN |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-VSON-4 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 150°C |
CoolSiC™+ |
|
IDD10SG60CXTMA2
|
DIODE SCHOTTKY 600V 10A TO252-3 |
Infineon Technologies |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-TO252-3 |
No Recovery Time > 500mA (Io) |
90µA @ 600V |
290pF @ 1V, 1MHz |
2.1V @ 10A |
600V |
0ns |
-55°C ~ 175°C |
CoolSiC™+ |
|
AIDW10S65C5XKSA1
|
DIODE SCHOTTKY 650V 10A TO247 |
Infineon Technologies |
TO-247-3 |
10A (DC) |
Silicon Carbide Schottky |
Through Hole |
PG-TO247-3-41 |
No Recovery Time > 500mA (Io) |
60µA @ 650V |
303pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-40°C ~ 175°C |
Automotive, AEC-Q100/101, CoolSiC™ |
|
SIDC03D60C6X1SA2
|
DIODE GEN PURP 600V 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Sawn on foil |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.95V @ 10A |
600V |
|
-40°C ~ 175°C |
|
|
IDL10G65C5XUMA1
|
DIODE SCHOTTKY 650V 10A VSON-4 |
Infineon Technologies |
4-PowerTSFN |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
PG-VSON-4 |
No Recovery Time > 500mA (Io) |
180µA @ 650V |
300pF @ 1V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 150°C |
CoolSiC™+ |
|
SIDC24D30SIC3
|
DIODE SILICON 300V 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Silicon Carbide Schottky |
Surface Mount |
Sawn on foil |
No Recovery Time > 500mA (Io) |
200µA @ 300V |
600pF @ 1V, 1MHz |
1.7V @ 10A |
300V |
0ns |
-55°C ~ 175°C |
|
|
SIDC03D60C8X7SA2
|
DIODE SWITCHING 600V 10A WAFER |
Infineon Technologies |
Die |
10A (DC) |
Standard |
Surface Mount |
Die |
Standard Recovery >500ns, > 200mA (Io) |
27µA @ 600V |
|
1.95V @ 10A |
600V |
|
-40°C ~ 175°C |
|