- Производитель
- Средний выпрямленный ток (Io)
-
- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDC28D120T6MX1SA2 | DIODE GEN PURP 1.2KV 50A WAFER | Infineon Technologies | Die | 50A | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1200V | 2.05V @ 50A | 1200V | -40°C ~ 175°C | |||||
| D1481N60TXPSA1 | DIODE GEN PURP 6KV 2200A | Infineon Technologies | DO-200AC, K-PUK | 2200A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 6000V | 1.8V @ 2500A | 6000V | -40°C ~ 160°C | ||||||
| IRD3CH16DF6 | DIODE CHIP EMITTER CONTROLLED | Infineon Technologies | |||||||||||||||
| D711N65TXPSA1 | DIODE GEN PURP 6.5KV 1070A | Infineon Technologies | DO-200AB, B-PUK | 1070A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 6500V | 1.9V @ 1200A | 6500V | -40°C ~ 160°C | ||||||
| IDV04S60CXKSA1 | DIODE SCHOTTKY 600V 4A TO220-2FP | Infineon Technologies | TO-220-2 Full Pack | 4A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2 Full Pack | No Recovery Time > 500mA (Io) | 50µA @ 600V | 130pF @ 1V, 1MHz | 1.9V @ 4A | 600V | 0ns | -55°C ~ 175°C | CoolSiC™+ | ||
| IDD06E60BUMA1 | DIODE GEN PURP 600V 14.7A TO252 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14.7A (DC) | Standard | Surface Mount | PG-TO252-3-1 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 2V @ 6A | 600V | 70ns | -55°C ~ 175°C | ||||
| BAS 40-05 B5003 | DIODE ARRAY SCHOTTKY 40V SOT23 | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Schottky | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 30V | 1V @ 40mA | 40V | 100ps | 150°C (Max) | 1 Pair Common Cathode | 120mA (DC) | |||
| DD540N26KHPSA1 | DIODE MODULE GP 2600V 540A | Infineon Technologies | Module | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 2600V | 1.48V @ 1700A | 2600V | -40°C ~ 150°C | 1 Pair Series Connection | 540A | ||||
| IDV06S60C | RECTIFIER DIODE, SCHOTTKY | Infineon Technologies | |||||||||||||||
| D711N60TXPSA1 | DIODE GEN PURP 6KV 1070A | Infineon Technologies | DO-200AB, B-PUK | 1070A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 6000V | 1.9V @ 1200A | 6000V | -40°C ~ 160°C | ||||||
| BAS28E6433HTMA1 | DIODE ARRAY GP 80V 200MA SOT143 | Infineon Technologies | TO-253-4, TO-253AA | Standard | Surface Mount | PG-SOT-143-3D | Small Signal =< 200mA (Io), Any Speed | 100nA @ 75V | 1.25V @ 150mA | 80V | 4ns | 150°C (Max) | 2 Independent | 200mA (DC) | |||
| ND104N18KHPSA1 | DIODE GP 1.8KV 104A BG-PB20-1 | Infineon Technologies | Module | 104A | Standard | Chassis Mount | BG-PB20-1 | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 1800V | 1800V | -40°C ~ 135°C | ||||||
| IDFW60C65D1XKSA1 | DIODE ARRAY GP 650V 56A TO247-3 | Infineon Technologies | TO-247-3 | Standard | Through Hole | PG-TO247-3-AI | Fast Recovery =< 500ns, > 200mA (Io) | 40µA @ 650V | 1.75V @ 30A | 650V | 112ns | -40°C ~ 175°C | 1 Pair Common Cathode | 56A (DC) | |||
| SIDC06D60F6X1SA4 | DIODE SWITCHING 600V WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 15A | 600V | -40°C ~ 175°C | |||||
| IDY15S120XKSA1 | DIODE SCHOTTKY 1.2KV 7.5A TO247 | Infineon Technologies | TO-247-3 Variant | 7.5A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO247HC-3 | No Recovery Time > 500mA (Io) | 180µA @ 1200V | 375pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 150°C | CoolSiC™+ |
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