Найдено: 24
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
1N3291AR DIODE GEN PURP 400V 100A DO205AA GeneSiC Semiconductor DO-205AA, DO-8, Stud 100A Standard, Reverse Polarity Chassis, Stud Mount DO-205AA (DO-8) Standard Recovery >500ns, > 200mA (Io) 24mA @ 400V 1.5V @ 100A 400V -40°C ~ 200°C
MURH10040 DIODE GEN PURP 400V 100A D-67 GeneSiC Semiconductor D-67 100A Standard Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 50V 1.3V @ 100A 400V 90ns
MURH10005 DIODE GEN PURP 50V 100A D-67 GeneSiC Semiconductor D-67 100A Standard Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 50V 1.3V @ 100A 50V 75ns
MURH10005R DIODE GEN PURP 50V 100A D-67 GeneSiC Semiconductor D-67 100A Standard, Reverse Polarity Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 50V 1.3V @ 100A 50V 75ns
1N3296A DIODE GEN PURP 1.2KV 100A DO205 GeneSiC Semiconductor DO-205AA, DO-8, Stud 100A Standard Chassis, Stud Mount DO-205AA (DO-8) Standard Recovery >500ns, > 200mA (Io) 9mA @ 1200V 1.5V @ 100A 1200V -40°C ~ 200°C
1N3289A DIODE GEN PURP 200V 100A DO205AA GeneSiC Semiconductor DO-205AA, DO-8, Stud 100A Standard Chassis, Stud Mount DO-205AA (DO-8) Standard Recovery >500ns, > 200mA (Io) 24mA @ 200V 1.5V @ 100A 200V -40°C ~ 200°C
1N3297A DIODE GEN PURP 1.4KV 100A DO205 GeneSiC Semiconductor DO-205AA, DO-8, Stud 100A Standard Chassis, Stud Mount DO-205AA (DO-8) Standard Recovery >500ns, > 200mA (Io) 7mA @ 1400V 1.5V @ 100A 1400V -40°C ~ 200°C
1N3297AR DIODE GEN PURP REV 1.4KV DO205AA GeneSiC Semiconductor DO-205AA, DO-8, Stud 100A Standard, Reverse Polarity Chassis, Stud Mount DO-205AA (DO-8) Standard Recovery >500ns, > 200mA (Io) 7mA @ 1400V 1.5V @ 100A 1400V -40°C ~ 200°C
MURH10010R DIODE GEN PURP 100V 100A D-67 GeneSiC Semiconductor D-67 100A Standard, Reverse Polarity Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 50V 1.3V @ 100A 100V 75ns