• Производитель
  • Средний выпрямленный ток (Io)
    • Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 1782
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
Серия
FR16KR05 DIODE GEN PURP REV 800V 16A DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 16A Standard, Reverse Polarity Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 100V 1.1V @ 16A 800V 500ns -65°C ~ 150°C
MBRF300100R DIODE SCHOTTKY 100V 150A TO244AB GeneSiC Semiconductor TO-244AB Schottky Chassis Mount TO-244AB Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 100V 840mV @ 150A 100V -55°C ~ 150°C 1 Pair Common Anode 150A
FR6MR05 DIODE GEN PURP REV 1KV 6A DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 6A Standard, Reverse Polarity Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 50V 1.4V @ 6A 1000V 500ns -65°C ~ 150°C
MSRTA300160(A)D DIODE MODULE 1.6KV 300A 3TOWER GeneSiC Semiconductor Three Tower Standard Chassis Mount Three Tower Standard Recovery >500ns, > 200mA (Io) 25µA @ 200V 1.2V @ 300A 1600V -55°C ~ 150°C 1 Pair Series Connection 300A (DC)
MBRTA60020RL DIODE SCHOTTKY 20V 300A 3TOWER GeneSiC Semiconductor Three Tower Schottky Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 20V 580mV @ 300A 20V -55°C ~ 150°C 1 Pair Common Anode 300A
GC08MPS12-220 SIC DIODE 1200V 8A TO-220-2 GeneSiC Semiconductor TO-220-2 43A (DC) Silicon Carbide Schottky Through Hole TO-220-2 No Recovery Time > 500mA (Io) 7µA @ 1200V 545pF @ 1V, 1MHz 1.8V @ 8A 1200V 0ns -55°C ~ 175°C SiC Schottky MPS™
MBR120100CT DIODE MODULE 100V 120A 2TOWER GeneSiC Semiconductor Twin Tower Schottky Chassis Mount Twin Tower Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 20V 840mV @ 60A 100V 1 Pair Common Anode 120A (DC)
MBR120200CTR DIODE SCHOTTKY 200V 60A 2 TOWER GeneSiC Semiconductor Twin Tower Schottky Chassis Mount Twin Tower Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 200V 920mV @ 60A 200V -55°C ~ 150°C 1 Pair Common Anode 60A
GD2X50MPS12N 1200V 100A SOT-227 SIC SCHOTTKY GeneSiC Semiconductor SOT-227-4, miniBLOC Silicon Carbide Schottky Chassis Mount SOT-227 No Recovery Time > 500mA (Io) 15µA @ 1200V 1.8V @ 50A 1200V 0ns -55°C ~ 175°C 2 Independent 76A (DC) SiC Schottky MPS™
MBR6080 DIODE SCHOTTKY 80V 60A DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 60A Schottky Chassis, Stud Mount DO-5 Fast Recovery =< 500ns, > 200mA (Io) 5mA @ 20V 840mV @ 60A 80V -65°C ~ 150°C
MURTA30060R DIODE GEN PURP 600V 150A 3 TOWER GeneSiC Semiconductor Three Tower Standard Chassis Mount Three Tower Standard Recovery >500ns, > 200mA (Io) 25µA @ 600V 1.7V @ 150A 600V -55°C ~ 150°C 1 Pair Common Anode 150A
S300Z DIODE GEN PURP 2KV 300A DO205 GeneSiC Semiconductor DO-205AB, DO-9, Stud 300A Standard Chassis, Stud Mount DO-205AB, DO-9 Standard Recovery >500ns, > 200mA (Io) 10µA @ 1600V 1.2V @ 300A 2000V -60°C ~ 180°C
MUR2X060A12 DIODE GEN PURP 1.2KV 60A SOT227 GeneSiC Semiconductor SOT-227-4, miniBLOC Standard Chassis Mount SOT-227 Standard Recovery >500ns, > 200mA (Io) 25µA @ 1200V 2.35V @ 60A 1200V -55°C ~ 175°C 2 Independent 60A
1N1189 DIODE GEN PURP 600V 35A DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 35A Standard Chassis, Stud Mount DO-5 Standard Recovery >500ns, > 200mA (Io) 10µA @ 50V 1.2V @ 35A 600V -65°C ~ 190°C
GD10MPS12E 1200V 10A TO-252-2 SIC SCHOTTKY GeneSiC Semiconductor TO-252-3, DPak (2 Leads + Tab), SC-63 29A (DC) Silicon Carbide Schottky Surface Mount TO-252-2 No Recovery Time > 500mA (Io) 5µA @ 1200V 367pF @ 1V, 1MHz 1.8V @ 10A 1200V 0ns -55°C ~ 175°C SiC Schottky MPS™
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