Найдено: 21
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
KBP01G BRIDGE RECT 1PHASE 100V 1.5A KBP Diodes Incorporated 4-SIP, KBP 100V 1.5A Single Phase Through Hole KBP Standard -65°C ~ 150°C (TJ) 5µA @ 100V 1.1V @ 1.5A
KBP02G BRIDGE RECT 1PHASE 200V 1.5A KBP Diodes Incorporated 4-SIP, KBP 200V 1.5A Single Phase Through Hole KBP Standard -65°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 1.5A
KBP152G C2G BRIDGE RECT 1PHASE 100V 1.5A KBP Taiwan Semiconductor Corporation 4-SIP, KBP 100V 1.5A Single Phase Through Hole KBP Standard -55°C ~ 150°C (TJ) 10µA @ 100V 1.1V @ 1.5A
KBP154G C2 BRIDGE RECT 1PHASE 400V 1.5A KBP Taiwan Semiconductor Corporation 4-SIP, KBP 400V 1.5A Single Phase Through Hole KBP Standard -55°C ~ 150°C (TJ) 10µA @ 400V 1.1V @ 1.5A
KBP153G C2 BRIDGE RECT 1PHASE 200V 1.5A KBP Taiwan Semiconductor Corporation 4-SIP, KBP 200V 1.5A Single Phase Through Hole KBP Standard -55°C ~ 150°C (TJ) 10µA @ 200V 1.1V @ 1.5A
KBP155G C2G BRIDGE RECT 1PHASE 600V 1.5A KBP Taiwan Semiconductor Corporation 4-SIP, KBP 600V 1.5A Single Phase Through Hole KBP Standard -55°C ~ 150°C (TJ) 10µA @ 600V 1.1V @ 1.5A