-
- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Технология
|
Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G2SB20-M3/51 | DIODE BRIDGE GBL | Vishay General Semiconductor - Diodes Division | 4-SIP, GBL | 200V | 1.5A | Single Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1V @ 750mA |
| G2SB80-E3/51 | BRIDGE RECT 1PHASE 800V 1.5A GBL | Vishay General Semiconductor - Diodes Division | 4-SIP, GBL | 800V | 1.5A | Single Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 50µA @ 600V | 1V @ 750mA |
| G2SB60-E3/51 | BRIDGE RECT 1PHASE 600V 1.5A GBL | Vishay General Semiconductor - Diodes Division | 4-SIP, GBL | 600V | 1.5A | Single Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1V @ 750mA |
| G2SB60-E3/45 | BRIDGE RECT 1PHASE 600V 1.5A GBL | Vishay General Semiconductor - Diodes Division | 4-SIP, GBL | 600V | 1.5A | Single Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1V @ 750mA |
- 10
- 15
- 50
- 100