• Рабочая температура
    • Ток утечки
    • Прямое напряжение
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Найдено: 34
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
G2SBA60L-E3/51 BRIDGE RECT 1PHASE 600V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 600V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1V @ 750mA
G2SBA60-E3/45 BRIDGE RECT 1PHASE 600V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 600V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1V @ 750mA
G2SBA20-E3/51 BRIDGE RECT 1PHASE 200V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 200V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1V @ 750mA
G2SBA60-E3/51 BRIDGE RECT 1PHASE 600V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 600V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1V @ 750mA
G2SB60L-5700E3/45 BRIDGE RECT 1PHASE 600V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 600V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1V @ 750mA
G2SB80-M3/45 DIODE BRIDGE Vishay General Semiconductor - Diodes Division 4-SIP, GBL 800V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1V @ 750mA
G2SB60L-5753E3/51 BRIDGE RECT 1PHASE 600V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 600V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1V @ 750mA
G2SB60L-5751M3/45 BRIDGE RECT 1PHASE 600V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 600V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1V @ 750mA
G2SBA20-M3/45 BRIDGE RECT 1PHASE 200V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 200V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1V @ 750mA
G2SB60-M3/51 BRIDGE RECT 1PHASE 600V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 600V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1V @ 750mA
G2SB80-M3/51 BRIDGE RECT 1PHASE 800V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 800V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1V @ 750mA
G2SBA80-M3/51 BRIDGE RECT 1PHASE 800V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 800V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1V @ 750mA
G2SB20-E3/45 BRIDGE RECT 1PHASE 200V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 200V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1V @ 750mA
G2SB60L-5752E3/45 BRIDGE RECT 1PHASE 600V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 600V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1V @ 750mA
G2SB80-E3/45 BRIDGE RECT 1PHASE 800V 1.5A GBL Vishay General Semiconductor - Diodes Division 4-SIP, GBL 800V 1.5A Single Phase Through Hole GBL Standard -55°C ~ 150°C (TJ) 50µA @ 600V 1V @ 750mA
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