Найдено: 36
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
Серия
DBL152G DIODE BRIDGE 1.5A 100V DBL Taiwan Semiconductor Corporation 4-DIP (0.300", 7.62mm) 100V 1.5A Single Phase Through Hole DBL Standard -55°C ~ 150°C (TJ) 2µA @ 100V 1.1V @ 1.5A
DBL155GHC1G BRIDGE RECT 1PHASE 600V 1.5A DBL Taiwan Semiconductor Corporation 4-DIP (0.300", 7.62mm) 600V 1.5A Single Phase Through Hole DBL Standard -55°C ~ 150°C (TJ) 2µA @ 600V 1.1V @ 1.5A Automotive, AEC-Q101
DBL153GHC1G BRIDGE RECT 1PHASE 200V 1.5A DBL Taiwan Semiconductor Corporation 4-DIP (0.300", 7.62mm) 200V 1.5A Single Phase Through Hole DBL Standard -55°C ~ 150°C (TJ) 2µA @ 200V 1.1V @ 1.5A Automotive, AEC-Q101
DBL157G BRIDGE RECT 1PHASE 1KV 1.5A DBL Taiwan Semiconductor Corporation 4-DIP (0.300", 7.62mm) 1kV 1.5A Single Phase Through Hole DBL Standard -55°C ~ 150°C (TJ) 2µA @ 1000V 1.1V @ 1.5A
DBL151G C1G BRIDGE RECT 1PHASE 50V 1.5A DBL Taiwan Semiconductor Corporation 4-DIP (0.300", 7.62mm) 50V 1.5A Single Phase Through Hole DBL Standard -55°C ~ 150°C (TJ) 2µA @ 100V 1.1V @ 1.5A
DBL154GH BRIDGE RECT 1PHASE 400V 1.5A DBL Taiwan Semiconductor Corporation 4-DIP (0.300", 7.62mm) 400V 1.5A Single Phase Through Hole DBL Standard -55°C ~ 150°C (TJ) 2µA @ 400V 1.1V @ 1.5A Automotive, AEC-Q101