Найдено: 25
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
NTE5303 R-BRIDGE 1000V 8 AMP SIP NTE Electronics, Inc 4-ESIP 1000V 8A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1V @ 8A
NTE5392 R-SI BRIDGE 600V 35A NTE Electronics, Inc 4-ESIP 600V 35A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.1V @ 17.5A
NTE53010 R-BRIDGE 1000V 15A SIP NTE Electronics, Inc 4-ESIP 1000V 15A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 10µA @ 1000V 1.05V @ 7.5A
NTE5330 R-SI BRIDGE 600V 6A NTE Electronics, Inc 4-ESIP 600V 6A Single Phase Through Hole 4-SIP Standard -50°C ~ 150°C (TJ) 5µA @ 600V 1V @ 6A
NTE5309 R-SI BRIDGE 200V 4A NTE Electronics, Inc 4-ESIP 200V 4A Single Phase Through Hole 4-SIP Standard -65°C ~ 125°C (TJ) 10µA @ 200V 1.1V @ 2A
NTE5394 R-SI BRIDGE 1000V 35A NTE Electronics, Inc 4-ESIP 1000V 35A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.1V @ 17.5A
NTE167 R-SI BRIDGE 200V 2A NTE Electronics, Inc 4-SIP 200V 2A Single Phase Through Hole 4-SIP Standard -55°C ~ 165°C (TJ) 10µA @ 200V 1.1V @ 2A
NTE53006 R-BRIDGE 200V 15A SIP NTE Electronics, Inc 4-ESIP 200V 15A Single Phase Through Hole 4-SIP Standard -55°C ~ 105°C (TJ) 10µA @ 200V 1.05V @ 7.5A
NTE5393 R-SI BRIDGE 800V 35A NTE Electronics, Inc 4-ESIP 800V 35A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 17.5A
NTE5311 R-SI BRIDGE 1000V 4A NTE Electronics, Inc 4-ESIP 1000V 4A Single Phase Through Hole 4-SIP Standard -65°C ~ 125°C (TJ) 10µA @ 1000V 1.1V @ 2A