Найдено: 23
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
CDBHM120L-G BRIDGE RECT 1PHASE 20V 1A MBS Comchip Technology TO-269AA, 4-BESOP 20V 1A Single Phase Surface Mount MBS Schottky -55°C ~ 125°C (TJ) 500µA @ 20V 550mV @ 1A
B8S-G BRIDGE RECT 1P 800V 800MA MBS Comchip Technology TO-269AA, 4-BESOP 800V 800mA Single Phase Surface Mount MBS Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 800mA
CDBHM180L-G BRIDGE RECT 1PHASE 80V 1A MBS Comchip Technology TO-269AA, 4-BESOP 80V 1A Single Phase Surface Mount MBS Schottky -55°C ~ 150°C (TJ) 500µA @ 80V 850mV @ 1A
B4S-HF BRIDGE RECT 1P 400V 800MA MBS Comchip Technology TO-269AA, 4-BESOP 400V 800mA Single Phase Surface Mount MBS Standard -55°C ~ 150°C (TJ) 5µA @ 400V 1.1V @ 800mA
B05S-G BRIDGE RECT 1PHASE 50V 800MA MBS Comchip Technology TO-269AA, 4-BESOP 50V 800mA Single Phase Surface Mount MBS Standard -55°C ~ 150°C (TJ) 5µA @ 50V 1.1V @ 800mA
CDBHM160L-HF BRIDGE RECT 1PHASE 60V 1A MBS Comchip Technology TO-269AA, 4-BESOP 60V 1A Single Phase Surface Mount MBS Schottky -55°C ~ 125°C (TJ) 500µA @ 60V 650mV @ 1A
B1S-G BRIDGE RECT 1P 100V 800MA MBS Comchip Technology TO-269AA, 4-BESOP 100V 800mA Single Phase Surface Mount MBS Standard -55°C ~ 150°C (TJ) 5µA @ 100V 1.1V @ 800mA
B2S-G BRIDGE RECT 1P 200V 800MA MBS Comchip Technology TO-269AA, 4-BESOP 200V 800mA Single Phase Surface Mount MBS Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 800mA