Найдено: 35
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
KBU3510-G BRIDGE RECT 1PHASE 1KV 35A KBU Comchip Technology 4-SIP, KBU 1kV 35A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 1000V 1.1V @ 17.5A
KBU2510-G BRIDGE RECT 1PHASE 1KV 3.6A KBU Comchip Technology 4-SIP, KBU 1kV 3.6A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 1000V 1.1V @ 12.5A
KBU2502-G BRIDGE RECT 1PHASE 200V 3.6A KBU Comchip Technology 4-SIP, KBU 200V 3.6A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 200V 1.1V @ 12.5A
KBU3506-G BRIDGE RECT 1PHASE 600V 4.2A KBU Comchip Technology 4-SIP, KBU 600V 4.2A Single Phase Through Hole KBU Standard -55°C ~ 125°C (TJ) 10µA @ 600V 1.1V @ 17.5A
KBU801-G BRIDGE RECT Comchip Technology 4-SIP, KBU 100V 8A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 100V 1V @ 4A