- Средний выпрямленный ток (Io)
- Производитель
- Обратное пиковое напряжение
- Тип корпуса
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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
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Прямое напряжение
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Серия
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CBR10F-J080 | BRIDGE RECT 1PHASE 800V 10A CM | Central Semiconductor Corp | 4-Square, CM | 800V | 10A | Single Phase | Through Hole | CM | Standard | 10µA @ 800V | 1.3V @ 5A | ||
CBR10F-J040 | BRIDGE RECT 1PHASE 400V 10A CM | Central Semiconductor Corp | 4-Square, CM | 400V | 10A | Single Phase | Through Hole | CM | Standard | 10µA @ 400V | 1.3V @ 5A | ||
CBR10F-J100 | BRIDGE RECT 1PHASE 1KV 10A CM | Central Semiconductor Corp | 4-Square, CM | 1kV | 10A | Single Phase | Through Hole | CM | Standard | 10µA @ 1000V | 1.3V @ 5A | ||
CBR10A-J040 | BRIDGE RECT 1PHASE 400V 10A CM | Central Semiconductor Corp | 4-Square, CM | 400V | 10A | Single Phase | Through Hole | CM | Avalanche | 10µA @ 400V | 1.2V @ 5A | ||
BR1001-G | BRIDGE RECT 1PHASE 100V 10A BR | Comchip Technology | 16-UFBGA, WLCSP | 100V | 10A | Single Phase | Surface Mount | 16-WLCSP (1.41x1.41) | Standard | -55°C ~ 150°C (TJ) | 10µA @ 100V | 1.1V @ 5A | |
GBJ1008-F | BRIDGE RECT 1PHASE 800V 10A GBJ | Diodes Incorporated | 4-SIP, GBJ | 800V | 10A | Single Phase | Through Hole | GBJ | Standard | -65°C ~ 150°C (TJ) | 10µA @ 800V | 1.05V @ 5A | |
KBU1006 | BRIDGE RECT 1PHASE 600V 10A KBU | GeneSiC Semiconductor | 4-SIP, KBU | 600V | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 600V | 1.05V @ 10A | |
KBU1010 | BRIDGE RECT 1PHASE 1KV 10A KBU | GeneSiC Semiconductor | 4-SIP, KBU | 1kV | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 1000V | 1.05V @ 10A | |
1N4438 | SINGLE PHASE BRIDGE RECTIFIER | Microchip Technology | Module | 600V | 10A | Single Phase | Chassis, Stud Mount | Module | Standard | -65°C ~ 160°C (TA) | 10µA @ 600V | 1.2V @ 10A | |
KBJA1008-BP | DIODE BRIDGE 10A JB | Micro Commercial Co | 4-SIP, JB | 800V | 10A | Single Phase | Through Hole | JB | Standard | -55°C ~ 150°C | 10µA @ 800V | 1.1V @ 5A | |
GBJL1004-BP | DIODE BRIDGE GBJL | Micro Commercial Co | 4-SIP, GBJL | 400V | 10A | Single Phase | Through Hole | GBJL | Standard | -55°C ~ 150°C | 10µA @ 400V | 1.05V @ 5A | |
GHXS010A060S-D1 | BRIDGE RECT 1P 600V 10A SOT227 | SemiQ | SOT-227-4, miniBLOC | 600V | 10A | Single Phase | Chassis Mount | SOT-227 | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 100µA @ 600V | 1.7V @ 10A | |
TS10P01G C2G | BRIDGE RECT 1PHASE 50V 10A TS-6P | Taiwan Semiconductor Corporation | 4-SIP, TS-6P | 50V | 10A | Single Phase | Through Hole | TS-6P | Standard | -55°C ~ 150°C (TJ) | 10µA @ 50V | 1.1V @ 10A | |
GBU1005H | BRIDGE RECT 1PHASE 600V 10A GBU | Taiwan Semiconductor Corporation | 4-SIP, GBU | 600V | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 10A | Automotive, AEC-Q101 |
KBU1010-A2-0000 | RECT BRIDGE 1000V 10A KBU | Yangzhou Yangjie Electronic Technology Co.,Ltd | 4-ESIP, KBU | 1kV | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 1000V | 1.1V @ 5A |
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