- Средний выпрямленный ток (Io)
- Производитель
- Обратное пиковое напряжение
- Тип корпуса
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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
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Прямое напряжение
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Серия
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CBR10A-J060 | BRIDGE RECT 1PHASE 600V 10A CM | Central Semiconductor Corp | 4-Square, CM | 600V | 10A | Single Phase | Through Hole | CM | Avalanche | 10µA @ 600V | 1.2V @ 5A | ||
CBR10F-J010 | BRIDGE RECT 1PHASE 100V 10A CM | Central Semiconductor Corp | 4-Square, CM | 100V | 10A | Single Phase | Through Hole | CM | Standard | 10µA @ 100V | 1.3V @ 5A | ||
GBU10005-G | BRIDGE RECT 1PHASE 50V 10A GBU | Comchip Technology | 4-SIP, GBU | 50V | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 50V | 1V @ 5A | |
BR1002SG-G | BRIDGE RECT 1PHASE 200V 10A BR-8 | Comchip Technology | 4-Square, BR-8 | 200V | 10A | Single Phase | Chassis Mount | BR-8 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 200V | 1.1V @ 5A | |
KBU10005-G | BRIDGE RECT 1PHASE 50V 10A KBU | Comchip Technology | 4-SIP, KBU | 50V | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 50V | 1V @ 5A | |
GBU10J | BRIDGE RECT 1PHASE 600V 10A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 600V | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 5A | |
BR106 | BRIDGE RECT 1P 600V 10A BR-10 | GeneSiC Semiconductor | 4-Square, BR-10 | 600V | 10A | Single Phase | Through Hole | BR-10 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 600V | 1.1V @ 5A | |
GBU10D-BP | BRIDGE RECT 1PHASE 200V 10A GBU | Micro Commercial Co | 4-SIP, GBU | 200V | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 5A | |
680-6 | BRIDGE RECT 1PHASE 600V 10A NA | Microsemi Corporation | 4-Square, NA | 600V | 10A | Single Phase | Surface Mount | NA | Standard | -65°C ~ 150°C (TJ) | 2µA @ 600V | ||
VJ448M | BRIDGE RECT 1PHASE 400V 10A VJ | Microsemi Corporation | 4-Square, VJ | 400V | 10A | Single Phase | Through Hole | VJ | Standard | -55°C ~ 175°C (TJ) | 5µA @ 400V | 1.3V @ 1A | |
TS10KL100 | BRIDGE RECT 1PHASE 1KV 10A KBJL | Taiwan Semiconductor Corporation | 4-SIP, KBJL | 1kV | 10A | Single Phase | Through Hole | KBJL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1V @ 5A | |
TS10K60-A | BRIDGE RECT 1PHASE 600V 10A TS4K | Taiwan Semiconductor Corporation | 4-SIP, TS4K | 600V | 10A | Single Phase | Through Hole | TS4K | Standard | -55°C ~ 150°C (TJ) | 10µA @ 600V | 1V @ 5A | |
KBU1005G T0 | BRIDGE RECT 1PHASE 600V 10A KBU | Taiwan Semiconductor Corporation | 4-SIP, KBU | 600V | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 10A | |
BU1008A5S-M3/45 | BRIDGE RECT 1P 800V 10A BU-5S | Vishay General Semiconductor - Diodes Division | 4-SIP, BU-5S | 800V | 10A | Single Phase | Through Hole | isoCINK+™ BU-5S | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 5A | |
GBJ1010-B1-0000 | RECT BRIDGE 1000V 10A 6KBJ | Yangzhou Yangjie Electronic Technology Co.,Ltd | 4-SIP, GBJ | 1kV | 10A | Single Phase | Through Hole | GBJ | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1V @ 5A |
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