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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
|
Package / Case
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Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
GBI15B | 1BRect, 100V, 15A | Diotec Semiconductor | 4-SIP, GBI | 100V | 3.2A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 7.5A |
GBI25D | 1BRect, 200V, 25A | Diotec Semiconductor | 4-SIP, GBI | 200V | 4.2A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 12.5A |
GBI25W | 1BRect, 1600V, 25A | Diotec Semiconductor | 4-SIP, GBI | 1.6kV | 5A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 1600V | 1.1V @ 12.5A |
GBI25G | 1BRect, 400V, 25A | Diotec Semiconductor | 4-SIP, GBI | 400V | 4.2A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 12.5A |
GBI10J | 1BRect, 600V, 10A | Diotec Semiconductor | 4-SIP, GBI | 600V | 3A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 5A |
GBI15D | 1BRect, 200V, 15A | Diotec Semiconductor | 4-SIP, GBI | 200V | 3.2A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 7.5A |
GBI20J | 1BRect, 600V, 20A | Diotec Semiconductor | 4-SIP, GBI | 600V | 3.6A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 10A |
GBI15J | 1BRect, 600V, 15A | Diotec Semiconductor | 4-SIP, GBI | 600V | 3.2A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 7.5A |
GBI35K | 1BRect, 800V, 35A | Diotec Semiconductor | 4-SIP, GBI | 800V | 5A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 17.5A |
GBI25B | 1BRect, 100V, 25A | Diotec Semiconductor | 4-SIP, GBI | 100V | 4.2A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 12.5A |
GBI25A | 1BRect, 50V, 25A | Diotec Semiconductor | 4-SIP, GBI | 50V | 4.2A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 12.5A |
GBI35A | 1BRect, 50V, 35A | Diotec Semiconductor | 4-SIP, GBI | 50V | 5A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 17.5A |
GBI35M | 1BRect, 1000V, 35A | Diotec Semiconductor | 4-SIP, GBI | 1kV | 5A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 17.5A |
GBI10M | 1BRect, 1000V, 10A | Diotec Semiconductor | 4-SIP, GBI | 1kV | 3A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 5A |
GBI20G | 1BRect, 400V, 20A | Diotec Semiconductor | 4-SIP, GBI | 400V | 3.6A | Single Phase | Through Hole | GBI | Standard | -50°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 10A |
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