- Тип диода
- Производитель
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SD51R | DIODE SCHOTTKY REV 45V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 45V | 660mV @ 60A | 45V | -65°C ~ 150°C | ||||
| 1N6096R | DIODE SCHOTTKY REV 40V DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 25A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 20V | 580mV @ 25A | 40V | -55°C ~ 150°C | ||||
| MBR6020R | DIODE SCHOTTKY REV 20V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 60A | 20V | -65°C ~ 150°C | ||||
| MBRT30035R | DIODE MODULE 35V 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 150A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 150A | |||
| MBRH12035R | DIODE SCHOTTKY 35V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 650mV @ 120A | 35V | |||||
| MBRH20060R | DIODE SCHOTTKY 60V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 750mV @ 200A | 60V | |||||
| MBRH200100R | DIODE SCHOTTKY 100V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 840mV @ 200A | 100V | |||||
| MBRH15045RL | DIODE SCHOTTKY 45V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 45V | 600mV @ 150A | 45V | |||||
| MBRH15040RL | DIODE SCHOTTKY 40V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 40V | 600mV @ 150A | 40V | |||||
| MBR6030R | DIODE SCHOTTKY REV 30V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 60A | 30V | -65°C ~ 150°C | ||||
| MBRT400100R | DIODE MODULE 100V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 880mV @ 200A | 100V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |||
| JAN1N7047CCT3 | RECTIFIER | Microchip Technology | TO-257-3 | 16A | Schottky, Reverse Polarity | Through Hole | TO-257 | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 150V | 1.13 V @ 16 A | 150V | -65°C ~ 150°C | Military, MIL-PRF-19500/737 | |||
| HS24230R | DIODE SCHOTTKY 30V 240A HALFPAK | Microsemi Corporation | HALF-PAK | 240A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 12mA @ 30V | 10500pF @ 5V, 1MHz | 550mV @ 240A | 30V | ||||
| HS18145R | DIODE SCHOTTKY 45V 180A HALFPAK | Microsemi Corporation | HALF-PAK | 180A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 45V | 7500pF @ 5V, 1MHz | 700mV @ 180A | 45V | ||||
| HS183100R | DIODE SCHOTTKY 100V 180A HALFPAK | Microsemi Corporation | HALF-PAK | 180A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 100V | 4800pF @ 5V, 1MHz | 910mV @ 180A | 100V |
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