- Тип диода
- Производитель
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MBR6040R | DIODE SCHOTTKY REV 40V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 60A | 40V | -65°C ~ 150°C | ||||
MBR6080R | DIODE SCHOTTKY REV 80V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 840mV @ 60A | 80V | -65°C ~ 150°C | ||||
1N5830R | DIODE SCHOTTKY REV 25V DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 25A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 20V | 580mV @ 25A | 25V | -55°C ~ 150°C | ||||
MBRT200100R | DIODE MODULE 100V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 880mV @ 100A | 100V | -55°C ~ 150°C | 1 Pair Common Anode | 100A | |||
MBRH20020R | DIODE SCHOTTKY 20V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 200A | 20V | |||||
MBRT30040R | DIODE MODULE 40V 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 150A | 40V | -55°C ~ 150°C | 1 Pair Common Anode | 150A | |||
MBR3560R | DIODE SCHOTTKY REV 60V DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 35A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 20V | 750mV @ 35A | 60V | -55°C ~ 150°C | ||||
MBRH200200R | DIODE SCHOTTKY 200V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 200A | 200V | -55°C ~ 150°C | ||||
1N5829R | DIODE SCHOTTKY REV 20V DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 25A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 20V | 580mV @ 25A | 20V | -55°C ~ 150°C | ||||
MBRH15035RL | DIODE SCHOTTKY 35V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 150A | 35V | |||||
MBR8080R | DIODE SCHOTTKY REV 80V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 80A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 80A | 80V | -55°C ~ 150°C | ||||
USD245CRHR2 | RECTIFIER | Microchip Technology | TO-205AD, TO-39-3 Metal Can | 4A | Schottky, Reverse Polarity | Through Hole | TO-39 (TO-205AD) | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 45V | 680mV @ 4A | 45V | -65°C ~ 175°C | ||||
USD245CR | RECTIFIER | Microchip Technology | TO-205AD, TO-39-3 Metal Can | 4A | Schottky, Reverse Polarity | Through Hole | TO-39 (TO-205AD) | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 45V | 680mV @ 4A | 45V | -65°C ~ 175°C | ||||
HS12045R | DIODE SCHOTTKY 45V 120A HALFPAK | Microsemi Corporation | HALF-PAK | 120A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 45V | 5500pF @ 5V, 1MHz | 550mV @ 120A | 45V | ||||
HS18140R | DIODE SCHOTTKY 40V 180A HALFPAK | Microsemi Corporation | HALF-PAK | 180A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 40V | 7500pF @ 5V, 1MHz | 700mV @ 180A | 40V |
- 10
- 15
- 50
- 100