• Тип диода
  • Производитель
  • Тип корпуса
Найдено: 113
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
Серия
MBR6040R DIODE SCHOTTKY REV 40V DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 60A Schottky, Reverse Polarity Chassis, Stud Mount DO-5 Fast Recovery =< 500ns, > 200mA (Io) 5mA @ 20V 650mV @ 60A 40V -65°C ~ 150°C
MBR6080R DIODE SCHOTTKY REV 80V DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 60A Schottky, Reverse Polarity Chassis, Stud Mount DO-5 Fast Recovery =< 500ns, > 200mA (Io) 5mA @ 20V 840mV @ 60A 80V -65°C ~ 150°C
1N5830R DIODE SCHOTTKY REV 25V DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 25A Schottky, Reverse Polarity Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 2mA @ 20V 580mV @ 25A 25V -55°C ~ 150°C
MBRT200100R DIODE MODULE 100V 100A 3TOWER GeneSiC Semiconductor Three Tower Schottky, Reverse Polarity Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 20V 880mV @ 100A 100V -55°C ~ 150°C 1 Pair Common Anode 100A
MBRH20020R DIODE SCHOTTKY 20V 200A D-67 GeneSiC Semiconductor D-67 200A Schottky, Reverse Polarity Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 5mA @ 20V 650mV @ 200A 20V
MBRT30040R DIODE MODULE 40V 150A 3TOWER GeneSiC Semiconductor Three Tower Schottky, Reverse Polarity Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 20V 750mV @ 150A 40V -55°C ~ 150°C 1 Pair Common Anode 150A
MBR3560R DIODE SCHOTTKY REV 60V DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 35A Schottky, Reverse Polarity Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 1.5mA @ 20V 750mV @ 35A 60V -55°C ~ 150°C
MBRH200200R DIODE SCHOTTKY 200V 200A D-67 GeneSiC Semiconductor D-67 200A Schottky, Reverse Polarity Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 200V 920mV @ 200A 200V -55°C ~ 150°C
1N5829R DIODE SCHOTTKY REV 20V DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 25A Schottky, Reverse Polarity Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 2mA @ 20V 580mV @ 25A 20V -55°C ~ 150°C
MBRH15035RL DIODE SCHOTTKY 35V 150A D-67 GeneSiC Semiconductor D-67 150A Schottky, Reverse Polarity Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 35V 600mV @ 150A 35V
MBR8080R DIODE SCHOTTKY REV 80V DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 80A Schottky, Reverse Polarity Chassis, Stud Mount DO-5 Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 80V 840mV @ 80A 80V -55°C ~ 150°C
USD245CRHR2 RECTIFIER Microchip Technology TO-205AD, TO-39-3 Metal Can 4A Schottky, Reverse Polarity Through Hole TO-39 (TO-205AD) Fast Recovery =< 500ns, > 200mA (Io) 2mA @ 45V 680mV @ 4A 45V -65°C ~ 175°C
USD245CR RECTIFIER Microchip Technology TO-205AD, TO-39-3 Metal Can 4A Schottky, Reverse Polarity Through Hole TO-39 (TO-205AD) Fast Recovery =< 500ns, > 200mA (Io) 2mA @ 45V 680mV @ 4A 45V -65°C ~ 175°C
HS12045R DIODE SCHOTTKY 45V 120A HALFPAK Microsemi Corporation HALF-PAK 120A Schottky, Reverse Polarity Chassis Mount HALF-PAK Fast Recovery =< 500ns, > 200mA (Io) 5mA @ 45V 5500pF @ 5V, 1MHz 550mV @ 120A 45V
HS18140R DIODE SCHOTTKY 40V 180A HALFPAK Microsemi Corporation HALF-PAK 180A Schottky, Reverse Polarity Chassis Mount HALF-PAK Fast Recovery =< 500ns, > 200mA (Io) 4mA @ 40V 7500pF @ 5V, 1MHz 700mV @ 180A 40V