- Тип диода
- Производитель
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MBR8045R | DIODE SCHOTTKY REV 45V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 80A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 650mV @ 80A | 45V | -55°C ~ 150°C | ||||
MBRH20040R | DIODE SCHOTTKY 40V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 200A | 40V | |||||
1N5832R | DIODE SCHOTTKY REV 20V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 40A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 20mA @ 10V | 520mV @ 40A | 20V | -65°C ~ 150°C | ||||
MBRH20080R | DIODE SCHOTTKY 80V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 840mV @ 200A | 80V | |||||
MBRH20030R | DIODE SCHOTTKY 30V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 200A | 30V | |||||
MBR8060R | DIODE SCHOTTKY REV 60V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 80A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 750mV @ 80A | 60V | -55°C ~ 160°C | ||||
1N6097R | DIODE SCHOTTKY REV 30V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 50A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 30V | 700mV @ 50A | 30V | -65°C ~ 150°C | ||||
MBR8035R | DIODE SCHOTTKY REV 35V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 80A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 35V | 750mV @ 80A | 35V | -65°C ~ 150°C | ||||
MBR6060R | DIODE SCHOTTKY REV 60V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 750mV @ 60A | 60V | -65°C ~ 150°C | ||||
MBRT20040R | DIODE MODULE 40V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 100A | 40V | -55°C ~ 150°C | 1 Pair Common Anode | 100A | |||
HS247180R | DIODE SCHOTTKY 180V 240A HALFPAK | Microsemi Corporation | HALF-PAK | 240A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 8mA @ 180V | 6000pF @ 5V, 1MHz | 860mV @ 240A | 180V | ||||
HS18135R | DIODE SCHOTTKY 35V 180A HALFPAK | Microsemi Corporation | HALF-PAK | 180A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 35V | 7500pF @ 5V, 1MHz | 700mV @ 180A | 35V | ||||
HS24040R | DIODE SCHOTTKY 40V 240A HALFPAK | Microsemi Corporation | HALF-PAK | 240A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 12mA @ 40V | 10500pF @ 5V, 1MHz | 550mV @ 240A | 40V | ||||
JANTXV1N5822.TR | 3A, 40V SCHOTTKY HR TR | Semtech Corporation | DO-201AD, Axial | 3A | Schottky, Reverse Polarity | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 40V | 525mV @ 3A | 40V | -65°C ~ 125°C | ||||
JANS1N5822.TR | SCHOTTKY DIODE 40V, 3A, /620 JAN | Semtech Corporation | DO-201AD, Axial | 3A | Schottky, Reverse Polarity | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 40V | 525mV @ 3A | 40V | -65°C ~ 125°C |
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