- Тип диода
- Производитель
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRH12060R | DIODE SCHOTTKY 60V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 750mV @ 120A | 60V | |||||
| MBR7545R | DIODE SCHOTTKY REV 45V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 75A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 650mV @ 75A | 45V | -55°C ~ 150°C | ||||
| MBRH120100R | DIODE SCHOTTKY 100V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 840mV @ 120A | 100V | |||||
| MBR12045CTR | DIODE MODULE 45V 120A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky, Reverse Polarity | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 650mV @ 60A | 45V | -55°C ~ 150°C | 1 Pair Common Anode | 120A (DC) | |||
| MBRH20020RL | DIODE SCHOTTKY 20V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 200mA | 20V | |||||
| MBR7535R | DIODE SCHOTTKY REV 35V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 75A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 35V | 750mV @ 75A | 35V | -55°C ~ 150°C | ||||
| MBRH15020RL | DIODE SCHOTTKY 20V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 150A | 20V | |||||
| MBRH20045R | DIODE SCHOTTKY 45V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 700mV @ 200A | 45V | -55°C ~ 150°C | ||||
| MBR7580R | DIODE SCHOTTKY REV 80V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 75A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 75A | 80V | -55°C ~ 150°C | ||||
| MBRH12040R | DIODE SCHOTTKY 40V 120A D-67 | GeneSiC Semiconductor | D-67 HALF-PAK | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 700mV @ 120A | 40V | -55°C ~ 150°C | ||||
| MBR8030R | DIODE SCHOTTKY REV 30V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 80A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 30V | 750mV @ 80A | 30V | -55°C ~ 150°C | ||||
| MBR6045R | DIODE SCHOTTKY REV 45V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 60A | 45V | -65°C ~ 150°C | ||||
| MBR400100CTR | DIODE MODULE 100V 200A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky, Reverse Polarity | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 840mV @ 200A | 100V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |||
| HS123100R | DIODE SCHOTTKY 100V 120A HALFPAK | Microsemi Corporation | HALF-PAK | 120A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 100V | 3000pF @ 5V, 1MHz | 910mV @ 120A | 100V | ||||
| HS247200R | DIODE SCHOTTKY 200V 240A HALFPAK | Microsemi Corporation | HALF-PAK | 240A | Schottky, Reverse Polarity | Chassis Mount | HALF-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 8mA @ 200V | 6000pF @ 5V, 1MHz | 860mV @ 240A | 200V |
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