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- Рабочая температура
- Топология
- Импеданс
- Вносимые потери
- Изоляция каналов
- P1dB
- Частота теста
- IIP3
- Серия
Наименование | Описание | Производитель
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Package / Case
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Тип корпуса
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Тип радиосигнала
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Диапазон частот
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Features
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Тип переключателя
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Напряжение питания
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Рабочая температура
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Топология
|
Импеданс
|
Вносимые потери
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Изоляция каналов
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P1dB
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Частота теста
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IIP3
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Серия
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HMC348LP3TR | IC RF SWITCH SPDT 2.5GHZ 16SMT | Analog Devices Inc. | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Cellular, CATV | 0Hz ~ 2.5GHz | SPDT | 4.5V ~ 5.5V | -40°C ~ 85°C | Absorptive | 50Ohm, 75Ohm | 0.7dB | 50dB | 28dBm | 2.5GHz | 51dBm | ||
HMC347LP3ETR | IC RF SWITCH SPDT 14GHZ 16QFN | Analog Devices Inc. | 16-VFQFN Exposed Pad | 16-QFN (3x3) | General Purpose | 0Hz ~ 14GHz | SPDT | -55°C ~ 85°C | Absorptive | 50Ohm | 1.9dB | -38dB | 23dBm | 14GHz | 43dBm | |||
HMC547LP3ETR | IC RF SWITCH SPDT 20GHZ 16QFN | Analog Devices Inc. | 16-VFQFN Exposed Pad | 16-QFN (3x3) | General Purpose | 0Hz ~ 20GHz | SPDT | -40°C ~ 85°C | Absorptive | 50Ohm | 2dB | -38dB | 23dBm | 20GHz | 45dBm | |||
HMC849LP4CE | IC RF SWITCH SPDT 6GHZ 16QFN | Analog Devices Inc. | 16-VFQFN Exposed Pad | 16-QFN (3x3) | General Purpose | 0Hz ~ 6GHz | SPDT | -40°C ~ 85°C | Absorptive | 50Ohm | 1.7dB | -52dB | 35dBm | 6GHz | 52dBm | |||
HMC347LP3 | IC RF SWITCH SPDT 14GHZ 16QFN | Analog Devices Inc. | 16-VFQFN Exposed Pad | 16-QFN (3x3) | General Purpose | 0Hz ~ 14GHz | SPDT | -55°C ~ 85°C | Absorptive | 50Ohm | 1.9dB | -38dB | 23dBm | 14GHz | 43dBm | |||
HMC347ALP3E | IC RF SWITCH SPDT 14GHZ 16QFN | Analog Devices Inc. | 16-VFQFN Exposed Pad | 16-QFN (3x3) | VSAT | 0Hz ~ 14GHz | SPDT | -55°C ~ 85°C | Absorptive | 50Ohm | 1.9dB | -38dB | 23dBm | 14GHz | 43dBm | |||
HMC347LP3E | IC RF SWITCH SPDT 14GHZ 16QFN | Analog Devices Inc. | 16-VFQFN Exposed Pad | 16-QFN (3x3) | General Purpose | 0Hz ~ 14GHz | SPDT | -55°C ~ 85°C | Absorptive | 50Ohm | 1.9dB | -38dB | 23dBm | 14GHz | 43dBm | |||
PE42552MLIB-Z | IC RF SWITCH SPDT 7.5GHZ 16QFN | pSemi | 16-WFQFN Exposed Pad | 16-QFN (3x3) | General Purpose | 0Hz ~ 7.5GHz | SPDT | 3V ~ 3.6V | -40°C ~ 85°C | Absorptive | 50Ohm | 1dB | 28dB | 34dBm | 7.5GHz | 65dBm | UltraCMOS®, HaRP™ | |
PE42521C-Z | IC RF SWITCH SPDT 13GHZ 16QFN | pSemi | 16-VFQFN Exposed Pad | 16-QFN (3x3) | General Purpose | 9kHz ~ 13GHz | SPDT | 2.3V ~ 5.5V | -40°C ~ 85°C | Absorptive | 50Ohm | 1.85dB | -17dB | 13GHz | 65dBm | UltraCMOS®, HaRP™ | ||
PE42520C-Z | IC RF SWITCH SPDT 13GHZ 16QFN | pSemi | 16-VFQFN Exposed Pad | 16-QFN (3x3) | ATE | 9kHz ~ 13GHz | SPDT | 2.3V ~ 5.5V | -40°C ~ 85°C | Absorptive | 50Ohm | 2dB | 18dB | 13GHz | 66dBm | UltraCMOS®, HaRP™ | ||
PE42552MLIB | IC RF SWITCH SPDT 7.5GHZ 16QFN | pSemi | 16-WFQFN Exposed Pad | 16-QFN (3x3) | General Purpose | 0Hz ~ 7.5GHz | SPDT | 3V ~ 3.6V | -40°C ~ 85°C | Absorptive | 50Ohm | 1dB | 28dB | 34dBm | 7.5GHz | 65dBm | UltraCMOS®, HaRP™ | |
TS7329K | IC RF SWITCH SPDT 5GHZ 16QFN | Tagore Technology | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Cellular, LTE | 500MHz ~ 5GHz | SPDT | 2.6V ~ 5.5V | -40°C ~ 85°C | Reflective | 50Ohm | 0.4dB | 30dB | 42dBm | 2.6GHz | 70dBm | Asymmetric | |
TS7321FK | IC RF SWITCH SPDT 6GHZ 16QFN | Tagore Technology | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Cellular, LTE | 10MHz ~ 6GHz | SPDT | 2.6V ~ 5.5V | -40°C ~ 85°C | Reflective | 50Ohm | 0.35dB | -45dB | 44dBm | 800MHz | 73dBm | Symmetric | |
TS7226K | IC RF SWITCH SPDT 7GHZ 16QFN | Tagore Technology | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Cellular, LTE | 500MHz ~ 7GHz | SPDT | 2.6V ~ 5.5V | -40°C ~ 85°C | Reflective | 50Ohm | 0.5dB | -35dB | 42.5dBm | 2.6GHz | 72dBm | Symmetric | |
TS7225FK | IC RF SWITCH SPDT 6GHZ 16QFN | Tagore Technology | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Cellular, LTE | 10MHz ~ 6GHz | SPDT | 2.6V ~ 5.5V | -40°C ~ 85°C | Reflective | 50Ohm | 0.35dB | -45dB | 42dBm | 800MHz | 73dBm | Symmetric |
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