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- Рабочая температура
- Топология
- Импеданс
- Вносимые потери
- Изоляция каналов
- P1dB
- Частота теста
- IIP3
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип корпуса
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Тип радиосигнала
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Диапазон частот
|
Features
|
Тип переключателя
|
Напряжение питания
|
Рабочая температура
|
Топология
|
Импеданс
|
Вносимые потери
|
Изоляция каналов
|
P1dB
|
Частота теста
|
IIP3
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NJG1801K75-TE1 | SPDT SWITCH GAAS MMIC | Nisshinbo Micro Devices Inc. | 6-XFDFN Exposed Pad | 6-DFN (1x1) | 802.11a/b/g/n/ac | 6GHz | SPDT | 1.8V ~ 5V | -40°C ~ 105°C | 50Ohm | 0.45dB | 28dB | 31dBm | 2.5GHz, 5.9GHz | ||||
| NJG1815K75-TE1 | SPDTSWITCH GAAS MMIC | Nisshinbo Micro Devices Inc. | 6-XFDFN Exposed Pad | 6-DFN (1x1) | 802.11a/b/g/n/ac/ax, WLAN | 6GHz | SPDT | 2.5V ~ 5V | -40°C ~ 105°C | 50Ohm | 0.45dB | 25dB | 31dBm | 3.8GHz, 6GHz | ||||
| NJG1544HC3-TE1 | IC RF SWITCH SPDT 2.5GHZ 10USB | Nisshinbo Micro Devices Inc. | 10-WFDFN Exposed Pad | 10-USB-C3 (2x1.5) | 802.11b/g | 0Hz ~ 2.5GHz | SPDT | 2.5V ~ 5.5V | -40°C ~ 85°C | Reflective | 50Ohm | 0.5dB | 23dB | 28dBm | 2.5GHz | |||
| NJG1806K75-TE1 | SPDTSWITCH GAAS MMIC | Nisshinbo Micro Devices Inc. | 6-XFDFN Exposed Pad | 6-DFN (1x1) | 802.11a/b/g/n/ac/ax, LTE, WLAN | 6GHz | SPDT | 2.5V ~ 5V | -40°C ~ 105°C | 50Ohm | 0.4dB | 25dB | 31dBm | 5.9GHz | ||||
| NJG1506R-TE2 | IC RF SWITCH SPDT 3GHZ 8VSP | Nisshinbo Micro Devices Inc. | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-VSP | General Purpose | 50MHz ~ 3GHz | SPDT | 2.5V ~ 5.5V | -30°C ~ 85°C | Reflective | 50Ohm | 0.5dB | 27dB | -22dBm | 2GHz | |||
| NJG1512V-TE1 | IC RF SWITCH SPDT 3GHZ 14SSOP | Nisshinbo Micro Devices Inc. | 14-TSSOP (0.173", 4.40mm Width) | 14-SSOP | GSM | 1MHz ~ 3GHz | SPDT | 2.5V ~ 5.5V | -20°C ~ 85°C | Reflective | 50Ohm | 0.8dB | -46dB | -22dBm | 2GHz | |||
| NJG1801BKGC-A-TE3 | SPDT SWITCH GAAS MMIC | Nisshinbo Micro Devices Inc. | 6-VFDFN Exposed Pad | 6-ESON (1.6x1.6) | 802.11a/b/g/n/ac/ax, Bluetooth, UWB, WiFi | 300MHz ~ 8.5GHz | SPDT | -40°C ~ 125°C | 50Ohm | 0.6dB | 18dB | 31dBm | 8.5GHz | Automotive, AEC-Q100 | ||||
| NJG1814MD7-TE1 | HIGH POWER SPDT SWITCH GAAS MMIC | Nisshinbo Micro Devices Inc. | 14-XFQFN Exposed Pad | 14-EQFN (1.6x1.6) | 802.11a/b/g/n/ac, LTE | 6GHz | DC Blocked | SPDT | 2.5V ~ 5V | -40°C ~ 105°C | 50Ohm | 0.45dB | 27dB | 5.85GHz | 60dBm | |||
| NJG1505R-TE1 | IC RF SWITCH SPDT 3GHZ 8VSP | Nisshinbo Micro Devices Inc. | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-VSP | General Purpose | 1MHz ~ 3GHz | SPDT | 2.5V ~ 5.5V | -30°C ~ 85°C | Reflective | 50Ohm | 0.8dB | -37dB | -22dBm | 2GHz | |||
| NJG1522KB2-TE1 | IC RF SWITCH SPDT 3GHZ 6FLP-B2 | Nisshinbo Micro Devices Inc. | 6-SMD, Flat Leads | 6-FLP-B2 | GSM | 50MHz ~ 3GHz | SPDT | -30°C ~ 85°C | Absorptive | 50Ohm | 0.5dB | 27dB | 24dBm | 2GHz | ||||
| NJG1522KB2-TE1# | IC RF SWITCH SPDT 3GHZ 6FLP-B2 | Nisshinbo Micro Devices Inc. | 6-SMD, Flat Leads | 6-FLP-B2 | GSM | 50MHz ~ 3GHz | SPDT | -30°C ~ 85°C | Absorptive | 50Ohm | 0.5dB | 27dB | 24dBm | 2GHz | ||||
| NJG1816K75-TE1 | ULTRA LOW CURRENT CONSUMPTION SP | Nisshinbo Micro Devices Inc. | 6-XFDFN Exposed Pad | 6-DFN (1x1) | SIGFOX, LoRaWAN, Wi-SUN | 50MHz ~ 3GHz | SPDT | 1.6V ~ 4V | -40°C ~ 105°C | 50Ohm | 0.45dB | 30dB | 920MHz | |||||
| NJG1512V-TE1# | IC RF SWITCH SPDT 3GHZ 14SSOP | Nisshinbo Micro Devices Inc. | 14-TSSOP (0.173", 4.40mm Width) | 14-SSOP | GSM | 1MHz ~ 3GHz | SPDT | 2.5V ~ 5.5V | -20°C ~ 85°C | Reflective | 50Ohm | 0.8dB | -46dB | -22dBm | 2GHz | |||
| NJG1516R-TE1 | IC RF SWITCH SPDT 3GHZ 8VSP | Nisshinbo Micro Devices Inc. | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-VSP | GSM | 1MHz ~ 3GHz | SPDT | -40°C ~ 85°C | Absorptive | 50Ohm | 0.55dB | 25dB | 2GHz | 62dBm | ||||
| NJG1532KB2-TE2 | IC RF SWITCH SPDT 3GHZ 6FLP-B2 | Nisshinbo Micro Devices Inc. | 6-SMD, Flat Leads | 6-FLP-B2 | GSM | 50MHz ~ 3GHz | SPDT | -30°C ~ 85°C | Absorptive | 50Ohm | 0.5dB | 27dB | 24dBm | 2GHz |
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