-
- Номинальный ток
- Shielding
- Рабочая температура
- Тип корпуса
- Height - Seated (Max)
- Ratings
- Material - Core
- Q @ Freq
- Current - Saturation
- DC Resistance (DCR)
- Frequency - Self Resonant
- Inductance Frequency - Test
- Серия
| Наименование | Описание | Производитель
|
Индуктивность
|
Допуск
|
Package / Case
|
Тип
|
Вид монтажа
|
Размеры
|
Номинальный ток
|
Shielding
|
Рабочая температура
|
Current - Saturation
|
DC Resistance (DCR)
|
Inductance Frequency - Test
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CIG32H2R2MNE | FIXED IND 2.2UH 1.6A 125 MOHM | Samsung Electro-Mechanics | 2.2µH | ±20% | 1210 (3225 Metric) | Multilayer | Surface Mount | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 1.6A | Shielded | -40°C ~ 125°C | 2.9A | 125mOhm | 1MHz | CIG32H |
| CIG32W1R0MNE | FIXED IND 1UH 1.5A 60 MOHM SMD | Samsung Electro-Mechanics | 1µH | ±20% | 1210 (3225 Metric) | Multilayer | Surface Mount | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 1.5A | Shielded | -40°C ~ 125°C | 2.7A | 60mOhm | 1MHz | CIG32W |
- 10
- 15
- 50
- 100