• Напряжение питания
    • Рабочая температура
    • Height - Seated (Max)
    • Ratings
    • Base Resonator
    • Frequency Stability
    • Current - Supply (Max)
    • Spread Spectrum Bandwidth
    • Серия
  • 10
  • 15
  • 50
  • 100
Списком Таблицей
Найдено: 4
Наименование Описание Производитель
Частота
Package / Case
Вид монтажа
Выход
Тип
Функция
Размеры
Напряжение питания
Рабочая температура
Height - Seated (Max)
Base Resonator
Frequency Stability
Current - Supply (Max)
Серия
SIT8008BC-11-XXS-109.557500D MEMS OSC XO 109.5575MHZ H/LVCMOS SiTime 109.5575MHz 4-SMD, No Lead Surface Mount HCMOS, LVCMOS XO (Standard) Standby (Power Down) 0.098" L x 0.079" W (2.50mm x 2.00mm) 2.5V ~ 3.3V -20°C ~ 70°C 0.031" (0.80mm) MEMS ±20ppm 4.5mA SiT8008B
SIT8008AC-11-XXS-109.557500E MEMS OSC XO 109.5575MHZ H/LVCMOS SiTime 109.5575MHz 4-SMD, No Lead Surface Mount HCMOS, LVCMOS XO (Standard) Standby (Power Down) 0.098" L x 0.079" W (2.50mm x 2.00mm) 2.25V ~ 3.63V -20°C ~ 70°C 0.031" (0.80mm) MEMS ±20ppm 4.5mA SiT8008
SIT8008AC-11-XXS-109.557500D MEMS OSC XO 109.5575MHZ H/LVCMOS SiTime 109.5575MHz 4-SMD, No Lead Surface Mount HCMOS, LVCMOS XO (Standard) Standby (Power Down) 0.098" L x 0.079" W (2.50mm x 2.00mm) 2.25V ~ 3.63V -20°C ~ 70°C 0.031" (0.80mm) MEMS ±20ppm 4.5mA SiT8008
SIT8008BC-11-XXS-109.557500E MEMS OSC XO 109.5575MHZ H/LVCMOS SiTime 109.5575MHz 4-SMD, No Lead Surface Mount HCMOS, LVCMOS XO (Standard) Standby (Power Down) 0.098" L x 0.079" W (2.50mm x 2.00mm) 2.5V ~ 3.3V -20°C ~ 70°C 0.031" (0.80mm) MEMS ±20ppm 4.5mA SiT8008B
  • 10
  • 15
  • 50
  • 100