• Напряжение питания
    • Рабочая температура
    • Height - Seated (Max)
    • Ratings
    • Base Resonator
    • Frequency Stability
    • Current - Supply (Max)
    • Spread Spectrum Bandwidth
    • Серия
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Списком Таблицей
Найдено: 4
Наименование Описание Производитель
Частота
Package / Case
Вид монтажа
Выход
Тип
Функция
Размеры
Напряжение питания
Рабочая температура
Height - Seated (Max)
Base Resonator
Frequency Stability
Current - Supply (Max)
Серия
SIT8008BI-71-XXS-108.127500E MEMS OSC XO 108.1275MHZ H/LVCMOS SiTime 108.1275MHz 4-SMD, No Lead Surface Mount HCMOS, LVCMOS XO (Standard) Standby (Power Down) 0.079" L x 0.063" W (2.00mm x 1.60mm) 2.5V ~ 3.3V -40°C ~ 85°C 0.031" (0.80mm) MEMS ±20ppm 4.5mA SiT8008B
SIT8008AI-71-XXS-108.127500D MEMS OSC XO 108.1275MHZ H/LVCMOS SiTime 108.1275MHz 4-SMD, No Lead Surface Mount HCMOS, LVCMOS XO (Standard) Standby (Power Down) 0.079" L x 0.063" W (2.00mm x 1.60mm) 2.25V ~ 3.63V -40°C ~ 85°C 0.031" (0.80mm) MEMS ±20ppm 4.5mA SiT8008
SIT8008AI-71-XXS-108.127500E MEMS OSC XO 108.1275MHZ H/LVCMOS SiTime 108.1275MHz 4-SMD, No Lead Surface Mount HCMOS, LVCMOS XO (Standard) Standby (Power Down) 0.079" L x 0.063" W (2.00mm x 1.60mm) 2.25V ~ 3.63V -40°C ~ 85°C 0.031" (0.80mm) MEMS ±20ppm 4.5mA SiT8008
SIT8008BI-71-XXS-108.127500D MEMS OSC XO 108.1275MHZ H/LVCMOS SiTime 108.1275MHz 4-SMD, No Lead Surface Mount HCMOS, LVCMOS XO (Standard) Standby (Power Down) 0.079" L x 0.063" W (2.00mm x 1.60mm) 2.5V ~ 3.3V -40°C ~ 85°C 0.031" (0.80mm) MEMS ±20ppm 4.5mA SiT8008B
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  • 100