- Manufacturer
- Frequency
-
- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Transistor Type
|
Operating Temperature
|
Supplier Device Package
|
Power - Output
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Gain
|
Noise Figure
|
Voltage - Test
|
Current - Test
|
Noise Figure (dB Typ @ f)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NE856M02-T1-AZ | RF TRANS NPN 12V 6.5GHZ SOT89 | CEL | TO-243AA | 100mA | 12V | 1.2W | Surface Mount | NPN | 150°C (TJ) | SOT-89 | 50 @ 20mA, 10V | 6.5GHz | 12dB | 1.1dB @ 1GHz | ||||||||
| NE58219-T1-A | TRANSISTOR BIPOLAR .9GHZ 3-SMINI | CEL | SC-75, SOT-416 | 60mA | 12V | 100mW | Surface Mount | NPN | 3-SuperMiniMold (19) | 60 @ 5mA, 5V | 5GHz | |||||||||||
| BFS 17P E8211 | RF TRANS NPN SOT23-3 | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | 25mA | 15V | 280mW | Surface Mount | NPN | 150°C (TJ) | PG-SOT23 | 40 @ 2mA, 1V | 1.4GHz | 3.5dB @ 800MHz | |||||||||
| BFP196WH6740 | RF TRANSISTOR, L BAND, NPN | Infineon Technologies | ||||||||||||||||||||
| BFR193WH6327XTSA1 | RF TRANS NPN 12V 8GHZ SOT323-3 | Infineon Technologies | SC-70, SOT-323 | 80mA | 12V | 580mW | Surface Mount | NPN | 150°C (TJ) | PG-SOT323 | 70 @ 30mA, 8V | 8GHz | 10.5dB ~ 16dB | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | ||||||||
| BFR193L3E6327XTMA1 | RF TRANS NPN 12V 8GHZ TSLP-3-1 | Infineon Technologies | SC-101, SOT-883 | 80mA | 12V | 580mW | Surface Mount | NPN | 150°C (TJ) | PG-TSLP-3-1 | 70 @ 30mA, 8V | 8GHz | 12.5dB ~ 19dB | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | ||||||||
| SD1400-03 | RF POWER TRANSISTOR | Microsemi Corporation | ||||||||||||||||||||
| ARF466BG | RF FET N CH 1000V 13A TO264 | Microsemi Corporation | TO-264-3, TO-264AA | 40.68MHz | 1000V | 13A | N-Channel | TO-264 | 150W | 16dB | 150V | |||||||||||
| MC1331-3 | RF POWER TRANSISTOR | Microsemi Corporation | ||||||||||||||||||||
| 75102 | RF POWER TRANSISTOR | Microsemi Corporation | ||||||||||||||||||||
| BFR93A215 | RF BIPOLAR TRANSISTOR | NXP USA Inc. | ||||||||||||||||||||
| MPSH81 | RF TRANS PNP 20V 600MHZ TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 50mA | 20V | 350mW | Through Hole | PNP | -55°C ~ 150°C (TJ) | TO-92-3 | 60 @ 5mA, 10V | 600MHz | ||||||||||
| MMBTH10-4LT1G | RF TRANS NPN 25V 800MHZ SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 25V | 225mW | Surface Mount | NPN | -55°C ~ 150°C (TJ) | SOT-23-3 (TO-236) | 120 @ 4mA, 10V | 800MHz | |||||||||||
| BFP169WH6740 | SI- AND SIGE:C-TRANSISTOR | Rochester Electronics, LLC | ||||||||||||||||||||
| 2SA1778-3-TB-E | PNP EPITAXIAL PLANAR SILICON | Sanyo | TO-236-3, SC-59, SOT-23-3 | 50mA | 15V | 250mW | Surface Mount | PNP | 3-CP | 60 @ 5mA, 10V | 1.2GHz | 13dB | 2.5dB @ 400MHz |
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