- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Breakdown (V(BR)GSS)
|
Power - Max
|
Current Drain (Id) - Max
|
Mounting Type
|
Operating Temperature
|
Supplier Device Package
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Input Capacitance (Ciss) (Max) @ Vds
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PN4391 | SMALL SIGNAL N-CHANNEL MOSFET | Fairchild Semiconductor | TO-226-3, TO-92-3 (TO-226AA) | 30V | 625mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 14pF @ 20V | 50mA @ 20V | 4V @ 1nA | 30 Ohms | |||
SST113 SOT-23 3L | N-CH JFET SWITCHES | Linear Integrated Systems, Inc. | TO-236-3, SC-59, SOT-23-3 | 35V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 12pF @ 10V | 100 Ohms | SST113 | ||||
MS2N4092 | JFET | Microchip Technology | ||||||||||||||
MX2N5116 | N CHANNEL JFET | Microsemi Corporation | TO-206AA, TO-18-3 Metal Can | 30V | 500mW | Through Hole | -65°C ~ 200°C (TJ) | TO-18 | P-Channel | 30V | 27pF @ 15V | 25mA @ 15V | 4V @ 1nA | 175 Ohms | Military, MIL-PRF-19500 | |
J111,126 | JFET N-CH 40V 400MW TO92-3 | NXP USA Inc. | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 400mW | Through Hole | 150°C (TJ) | TO-92-3 | N-Channel | 40V | 6pF @ 10V (VGS) | 20mA @ 15V | 10V @ 1µA | 30 Ohms | ||
J3A012YXS/T0BY4551 | TRANSISTOR JFET 8PLLCC | NXP USA Inc. | ||||||||||||||
BF246B | JFET N-CH 25V 625MW TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 25V | 625mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 60mA @ 15V | 600mV @ 10nA | |||||
2N5460_D75Z | JFET P-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 7pF @ 15V | 1mA @ 15V | 750mV @ 1µA | ||||
BSR58 | JFET N-CH 40V 0.25W SOT-23 | onsemi | TO-236-3, SC-59, SOT-23-3 | 40V | 250mW | Surface Mount | 150°C (TJ) | SOT-23-3 | N-Channel | 8mA @ 15V | 800mV @ 0.5nA | 60 Ohms | ||||
PN4393_D26Z | JFET N-CH 30V 625MW TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 30V | 625mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 14pF @ 20V | 5mA @ 20V | 500mV @ 1nA | 100 Ohms | |||
MMBF5434 | JFET N-CH 25V 0.35W SUPERSOT-23 | onsemi | TO-236-3, SC-59, SOT-23-3 | 25V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 30pF @ 10V (VGS) | 30mA @ 15V | 1V @ 3nA | ||||
PN4093 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 40V | 625mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 16pF @ 20V | 8mA @ 20V | 1V @ 1nA | 80 Ohms | |||
PMBFJ176,215 | SMALL SIGNAL P-CHANNEL MOSFET | Rochester Electronics, LLC | TO-236-3, SC-59, SOT-23-3 | 30V | 300mW | Surface Mount | 150°C (TJ) | SOT-23 (TO-236AB) | P-Channel | 30V | 8pF @ 10V (VGS) | 2mA @ 15V | 1V @ 10nA | 250 Ohms | ||
TF208TH-4-TL-H | JFET N-CH 1MA 100MW VTFP | Rochester Electronics, LLC | 3-SMD, Flat Lead | 100mW | Surface Mount | 150°C (TJ) | VTFP | N-Channel | 5pF @ 2V | 140µA @ 2V | 100mV @ 1µA | |||||
TF218THC-5-TL-H-SY | N CHANNEL SILICON JFET FOR ELECT | Sanyo |
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