- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Breakdown (V(BR)GSS)
|
Power - Max
|
Current Drain (Id) - Max
|
Mounting Type
|
Operating Temperature
|
Supplier Device Package
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Input Capacitance (Ciss) (Max) @ Vds
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BF246B | SCR | Central Semiconductor Corp | ||||||||||||||
| MX2N4859UB/TR | JFET | Microchip Technology | ||||||||||||||
| 2N4092UB/TR | JFET | Microchip Technology | 3-SMD, No Lead | 40V | 360mW | Surface Mount | -65°C ~ 175°C (TJ) | 3-UB (3.09x2.45) | N-Channel | 40V | 16pF @ 20V | 15mA @ 20V | 50 Ohms | |||
| MV2N4861 | N CHANNEL JFET | Microchip Technology | TO-206AA, TO-18-3 Metal Can | 30V | 360mW | Through Hole | -65°C ~ 200°C (TJ) | TO-18 (TO-206AA) | N-Channel | 30V | 18pF @ 10V | 80mA @ 15V | 4V @ 0.5nA | 60 Ohms | Military, MIL-PRF-19500/385 | |
| 2N3821 | N CHANNEL JFET | Microchip Technology | TO-206AF, TO-72-4 Metal Can | 50V | 300mW | Through Hole | -55°C ~ 200°C (TJ) | TO-72 | N-Channel | 50V | 6pF @ 15V | 2.5mA @ 15V | 4V @ 0.5nA | Military, MIL-PRF-19500/375 | ||
| 2N3823 | N CHANNEL JFET | Microchip Technology | TO-206AF, TO-72-4 Metal Can | 30V | 300mW | Through Hole | -55°C ~ 200°C (TJ) | TO-72 | N-Channel | 30V | 6pF @ 15V | 20mA @ 15V | 8V @ 500pA | Military, MIL-PRF-19500/375 | ||
| 2N5115UB | P CHANNEL JFET | Microsemi Corporation | 3-SMD, No Lead | 30V | 500mW | Surface Mount | -65°C ~ 200°C (TJ) | UB | P-Channel | 30V | 25pF @ 15V | 60mA @ 15V | 6V @ 1nA | 100 Ohms | Military, MIL-PRF-19500 | |
| MMBFJ175LT3G | JFET P-CH 30V 0.225W SOT23 | onsemi | TO-236-3, SC-59, SOT-23-3 | 30V | 225mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 (TO-236) | P-Channel | 11pF @ 10V (VGS) | 7mA @ 15V | 3V @ 10nA | 125 Ohms | |||
| 2N5461_D74Z | JFET P-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 7pF @ 15V | 2mA @ 15V | 1V @ 1µA | ||||
| TF202THC-5-TL-H | JFET N-CH 1MA 100MW VTFP | onsemi | 3-SMD, Flat Lead | 100mW | 1 mA | Surface Mount | 150°C (TJ) | 3-VTFP | N-Channel | 3.5pF @ 5V | 210µA @ 5V | 200mV @ 1µA | ||||
| EC3A04B-3-TL-H | JFET N-CH 10MA 100MW ECSP1006-3 | onsemi | 3-XFDFN | 100mW | 10 mA | Surface Mount | 150°C (TJ) | ECSP1006-3 | N-Channel | 30V | 4pF @ 10V | 1.2mA @ 10V | 180mV @ 1µA | 200 Ohms | ||
| 2SK1070PIETR-E | JFET N-CH MPAK | Renesas Electronics America | TO-236-3, SC-59, SOT-23-3 | 22V | 150mW | Surface Mount | 150°C | 3-MPAK | N-Channel | 9pF @ 5V | 12mA @ 5V | 0V @ 10µA | ||||
| TF252TH-4-TL-H | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | 3-SMD, Flat Lead | 100mW | Surface Mount | 150°C (TJ) | 3-VTFP | N-Channel | 3.1pF @ 2V | 140µA @ 2V | 100mV @ 1µA | |||||
| 2SK596S-A | SMALL SIGNAL FET | Rochester Electronics, LLC | SC-72 | 100mW | Through Hole | 150°C (TJ) | 3-SPA | N-Channel | 4.1pF @ 5V | 100µA @ 5V | 500mV @ 1µA | |||||
| JFE150DCKR | ULTRA-LOW NOISE, LOW GATE CURREN | Texas Instruments | 5-TSSOP, SC-70-5, SOT-353 | 40V | 50 mA | Surface Mount | -40°C ~ 125°C (TA) | SC-70-5 | N-Channel | 40V | 24pF @ 5V | 24mA @ 10V |
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