Semiconductors, Transistors, Transistors - JFETs Toshiba Semiconductor and Storage

Found: 14
  • JFET N-CH 50V SC59
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
    • Current Drain (Id) - Max: 6.5 mA
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • MOSFET 2N-CH JFET 50V SMV
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-74A, SOT-753
    • Supplier Device Package: SMV
    • FET Type: 2 N-Channel (Dual)
    • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
    • Power - Max: 300mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
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  • JFET N-CH 50V S-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
    • Current Drain (Id) - Max: 6.5 mA
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • JFET N-CH 0.1W USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: USM
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
    • Power - Max: 100mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • JFET N-CH 50V 0.1W USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
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  • JFET N-CH 50V 0.1W USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
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  • JFET DUAL N-CH USV
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: 5-TSSOP, SC-70-5, SOT-353
    • Supplier Device Package: USV
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
    • Power - Max: 200mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
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  • JFET DUAL N-CH USV
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 5-TSSOP, SC-70-5, SOT-353
    • Supplier Device Package: USV
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
    • Power - Max: 200mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
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  • JFET N-CH 50V S-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
    • Current Drain (Id) - Max: 6.5 mA
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • JFET N-CH 50V SMV
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-74A, SOT-753
    • Supplier Device Package: SMV
    • FET Type: 2 N-Channel (Dual)
    • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
    • Power - Max: 300mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
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  • JFET N-CH 50V 0.1W USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: USM
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
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  • MOSFET 2N-CH JFET 50V SMV
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-74A, SOT-753
    • Supplier Device Package: SMV
    • FET Type: 2 N-Channel (Dual)
    • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
    • Power - Max: 300mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
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  • JFET N-CH 50V SC59
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
    • Current Drain (Id) - Max: 6.5 mA
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • JFET N-CH 0.1W USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: USM
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
    • Power - Max: 100mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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