Semiconductors, Transistors, Transistors - JFETs max power 500mW package TO-18 (TO-206AA)

    • FET Type
    • Drain to Source Voltage (Vdss)
    • Input Capacitance (Ciss) (Max) @ Vds
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Series
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List Table
Found: 13
  • MX2N5115
    N CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
    • Resistance - RDS(On): 100 Ohms
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  • 2N5115
    P CHANNEL JFET
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 60mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
    • Resistance - RDS(On): 100 Ohms
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  • MQ2N5114
    P-CHANNEL J-FET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
    • Resistance - RDS(On): 75 Ohms
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  • 2N5115
    P CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 60mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
    • Resistance - RDS(On): 100 Ohms
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  • MX2N5114
    N CHANNEL JFET
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
    • Resistance - RDS(On): 75 Ohms
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  • MV2N5114
    P CHANNEL JFET
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
    • Resistance - RDS(On): 75 Ohms
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  • 2N5114
    P CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
    • Resistance - RDS(On): 75 Ohms
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  • MV2N5114
    P CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
    • Resistance - RDS(On): 75 Ohms
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  • 2N5115E3
    JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
    • Resistance - RDS(On): 100 Ohms
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  • MX2N5114
    N CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
    • Resistance - RDS(On): 75 Ohms
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  • MV2N5116
    P CHANNEL JFET
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
    • Resistance - RDS(On): 100 Ohms
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  • 2N5114
    P CHANNEL JFET
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
    • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
    • Resistance - RDS(On): 75 Ohms
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  • MV2N5116
    P CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
    • Power - Max: 500mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
    • Resistance - RDS(On): 100 Ohms
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  • 10
  • 15
  • 50
  • 100