- Supplier Device Package
- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
- Resistance - RDS(On): 250 Ohms
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-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Power - Max: 250mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
- Resistance - RDS(On): 40 Ohms
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-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Power - Max: 250mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 12mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Resistance - RDS(On): 50 Ohms
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-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
- Resistance - RDS(On): 250 Ohms
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- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Power - Max: 250mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
- Current Drain (Id) - Max: 20 mA
- Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
- Resistance - RDS(On): 25 Ohms
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-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 250mW
- Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
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-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Power - Max: 250mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
- Resistance - RDS(On): 100 Ohms
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Power - Max: 250mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 0.5nA
- Resistance - RDS(On): 60 Ohms
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Power - Max: 250mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1µA
- Resistance - RDS(On): 18 Ohms
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-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
- Resistance - RDS(On): 125 Ohms
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Resistance - RDS(On): 300 Ohms
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Power - Max: 250mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 40mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1µA
- Resistance - RDS(On): 12 Ohms
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
- Resistance - RDS(On): 85 Ohms
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Power - Max: 250mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
- Resistance - RDS(On): 8 Ohms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
- Resistance - RDS(On): 30 Ohms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100