Semiconductors, Transistors, Transistors - JFETs max power 100mW package S-Mini

    • FET Type
    • Drain to Source Voltage (Vdss)
    • Input Capacitance (Ciss) (Max) @ Vds
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Series
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List Table
Found: 2
  • 2SK208-R(TE85L,F)
    JFET N-CH 50V S-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
    • Current Drain (Id) - Max: 6.5 mA
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • 2SK208-Y(TE85L,F)
    JFET N-CH 50V S-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
    • Current Drain (Id) - Max: 6.5 mA
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • 10
  • 15
  • 50
  • 100