- Supplier Device Package
- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1.2V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
- Power - Max: 190W
- Voltage - Breakdown (V(BR)GSS): 1.2 V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1.2V
- Current Drain (Id) - Max: 26 A
- Resistance - RDS(On): 100 mOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1.2V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
- Power - Max: 190W
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1.2V
- Resistance - RDS(On): 100 mOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100