Semiconductors, Transistors, Transistors - JFETs max power 360mW package 3-UB (3.09x2.45)

Found: 10
  • JFET N-CHAN 40V 3SMD
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
    • Resistance - RDS(On): 30 Ohms
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  • JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
    • Resistance - RDS(On): 50 Ohms
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  • JFET N-CHAN 40V 3SMD
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
    • Resistance - RDS(On): 80 Ohms
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  • JFET N-CHAN 40V 3SMD
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
    • Resistance - RDS(On): 60 Ohms
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  • JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
    • Resistance - RDS(On): 30 Ohms
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  • JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
    • Resistance - RDS(On): 80 Ohms
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  • JFET N-CHAN 40V 3SMD
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/431
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
    • Resistance - RDS(On): 30 Ohms
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  • JFET N-CHAN 40V 3SMD
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
    • Resistance - RDS(On): 50 Ohms
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  • JFET N-CHAN 40V 3SMD
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/431
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
    • Resistance - RDS(On): 80 Ohms
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  • JFET N-CHAN 40V 3SMD
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/431
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: 3-UB (3.09x2.45)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
    • Resistance - RDS(On): 50 Ohms
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