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List Table
Found: 27
Partnumber Description Manufacturer
Package / Case
Voltage - Breakdown (V(BR)GSS)
Power - Max
Current Drain (Id) - Max
Mounting Type
Operating Temperature
Supplier Device Package
FET Type
Drain to Source Voltage (Vdss)
Input Capacitance (Ciss) (Max) @ Vds
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Series
LSK389B TO-71 6L LOW NOISE, MONOLITHIC DUAL, N-CH Linear Integrated Systems, Inc. TO-71-6 Metal Can 40V 400mW 10 mA Through Hole -55°C ~ 150°C (TJ) TO-71 2 N-Channel (Dual) 40V 25pF @ 10V 6mA @ 10V 300 mV @ 1 µA LSK389
LSK170B SOT-23 3L LOW NOISE & CAPACITANCE, HIGH IN Linear Integrated Systems, Inc. TO-236-3, SC-59, SOT-23-3 40V 400mW 10 mA Surface Mount -55°C ~ 135°C (TJ) SOT-23-3 N-Channel 40V 20pF @ 15V 6mA @ 10V 200 mV @ 1 nA LSK170B
LS844 SOIC 8L LOW NOISE, LOW DRIFT, LOW CAPACI Linear Integrated Systems, Inc. 8-SOIC (0.154", 3.90mm Width) 60 V 400mW 50 mA Surface Mount -55°C ~ 150°C (TJ) 8-SOIC 2 N-Channel 60V 8pF @ 15V 1.5mA @ 15V 1V @ 1nA LS844
LSK170A TO-92 3L LOW NOISE & CAPACITANCE, HIGH IN Linear Integrated Systems, Inc. TO-226-3, TO-92-3 (TO-226AA) 40V 400mW 10 mA Through Hole -55°C ~ 135°C (TJ) TO-92 N-Channel 40V 20pF @ 15V 2.6mA @ 10V 200 mV @ 1 nA LSK170A
LS844 SOT-23 6L LOW NOISE, LOW DRIFT, LOW CAPACI Linear Integrated Systems, Inc. TO-236-3, SC-59, SOT-23-3 60 V 400mW 50 mA Surface Mount -55°C ~ 150°C (TJ) SOT-23-3 2 N-Channel 60V 8pF @ 15V 1.5mA @ 15V 1V @ 1nA LS844
J108,126 JFET N-CH 25V 0.4W SOT54 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 25V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 25V 30pF @ 0V 80mA @ 5V 10V @ 1µA 8 Ohms
J111,126 JFET N-CH 40V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 40V 6pF @ 10V (VGS) 20mA @ 15V 10V @ 1µA 30 Ohms
J177,126 JFET P-CH 30V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 400mW Through Hole 150°C (TJ) TO-92-3 P-Channel 30V 8pF @ 10V (VGS) 1.5mA @ 15V 800mV @ 10nA 300 Ohms
J113,126 JFET N-CH 40V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 40V 6pF @ 10V (VGS) 2mA @ 15V 500mV @ 1µA 100 Ohms
J174,126 JFET P-CH 30V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 400mW Through Hole 150°C (TJ) TO-92-3 P-Channel 30V 8pF @ 10V (VGS) 20mA @ 15V 5V @ 10nA 85 Ohms
J175,116 JFET P-CH 30V 0.4W TO92 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 400mW Through Hole 150°C (TJ) TO-92-3 P-Channel 30V 8pF @ 10V (VGS) 7mA @ 15V 3V @ 10nA 125 Ohms
J176,126 JFET P-CH 30V 400MW TO92-3 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 30V 400mW Through Hole 150°C (TJ) TO-92-3 P-Channel 30V 8pF @ 10V (VGS) 2mA @ 15V 1V @ 10nA 250 Ohms
J109,126 JFET N-CH 25V 0.4W SOT54 NXP USA Inc. TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 25V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 25V 30pF @ 10V (VGS) 80mA @ 15V 2V @ 1µA 12 Ohms
CPH3910-TL-E JFET N-CH 25V 50MA 3CPH onsemi TO-236-3, SC-59, SOT-23-3 25V 400mW 50 mA Surface Mount 150°C (TJ) 3-CPH N-Channel 25V 6pF @ 5V 20mA @ 5V 1.8V @ 100µA
J111,126 JFET N-CH 40V 400MW TO92-3 Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 40V 400mW Through Hole 150°C (TJ) TO-92-3 N-Channel 40V 6pF @ 10V (VGS) 20mA @ 15V 10V @ 1µA 30 Ohms
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