• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
• Resistance - RDS(On): 85 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V
• Voltage - Cutoff (VGS off) @ Id: 600mV @ 1nA

• Manufacturer: Central Semiconductor Corp
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 175°C (TJ)
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
• Power - Max: 350mW
• Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
• Resistance - RDS(On): 40 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92 (TO-226)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 15V (VGS)
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
• Resistance - RDS(On): 60 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
• Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
• Resistance - RDS(On): 150 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 25V
• Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA
• Resistance - RDS(On): 10 Ohms

• Manufacturer: Central Semiconductor Corp
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
• Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
• Resistance - RDS(On): 100 Ohms

• Manufacturer: Vishay Siliconix
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 25V
• Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA

• Manufacturer: Linear Integrated Systems, Inc.
• Series: PN4392
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Resistance - RDS(On): 60 Ohms

• Manufacturer: Linear Integrated Systems, Inc.
• Series: PN4393
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Resistance - RDS(On): 100 Ohms

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 25V
• Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA
• Resistance - RDS(On): 10 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 25V
• Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA
• Resistance - RDS(On): 10 Ohms

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 2V @ 4nA
• Resistance - RDS(On): 40 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA
• Resistance - RDS(On): 60 Ohms

• Manufacturer: Central Semiconductor Corp
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 35V
• Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 35V
• Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA