- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Breakdown (V(BR)GSS)
|
Power - Max
|
Mounting Type
|
Operating Temperature
|
Supplier Device Package
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Input Capacitance (Ciss) (Max) @ Vds
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| J111RLRAG | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 20mA @ 15V | 3V @ 1µA | 30 Ohms | ||
| TF252-4-TL-H | SMALL SIGNAL FET | Rochester Electronics, LLC | 3-SMD, Flat Lead | 30mW | Surface Mount | 150°C (TJ) | 3-USFP | N-Channel | 3.1pF @ 2V | 140µA @ 2V | 100mV @ 1µA | |||
| IJW120R100T1FKSA1 | POWER FIELD-EFFECT TRANSISTOR | Rochester Electronics, LLC | TO-247-3 | 190W | Through Hole | -55°C ~ 175°C (TJ) | PG-TO247-3 | N-Channel | 1.2V | 1550pF @ 19.5V (VGS) | 1.5µA @ 1.2V | 100 mOhms | ||
| J176 | SMALL SIGNAL P-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 2mA @ 15V | 1V @ 10nA | 250 Ohms | ||
| 2N5639G | SMALL SIGNAL FET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 35V | 310mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30V | 10pF @ 12V (VGS) | 25mA @ 20V | 60 Ohms | |
| FJZ594JBTF | TRANSISTOR | Rochester Electronics, LLC | SOT-623F | 20V | 100mW | Surface Mount | 150°C (TJ) | SOT-623F | N-Channel | 3.5pF @ 5V | 150µA @ 5V | 600mV @ 1µA | ||
| 2N5639RLRAG | SMALL SIGNAL FET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 310mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30V | 10pF @ 12V (VGS) | 25mA @ 20V | 60 Ohms | |
| TF262TH-4-TL-H | SMALL SIGNAL FET | Rochester Electronics, LLC | 3-SMD, Flat Lead | 100mW | Surface Mount | 150°C (TJ) | VTFP | N-Channel | 3.5pF @ 2V | 140µA @ 2V | 200mV @ 1µA | |||
| J112RLRAG | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 5mA @ 15V | 1V @ 1µA | 50 Ohms | ||
| MMBF5484LT1G | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-236-3, SC-59, SOT-23-3 | 25V | 225mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 (TO-236) | N-Channel | 5pF @ 15V | 1mA @ 15V | 300mV @ 10nA | ||
| J112,126 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 400mW | Through Hole | 150°C (TJ) | TO-92-3 | N-Channel | 40V | 6pF @ 10V (VGS) | 5mA @ 15V | 1V @ 1µA | 50 Ohms |
| 2SK1109(2)-A | N-CHANNEL JFET | Rochester Electronics, LLC | ||||||||||||
| BFR30LT1G | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-236-3, SC-59, SOT-23-3 | 225mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 (TO-236) | N-Channel | 25V | 5pF @ 10V | 4mA @ 10V | 5V @ 0.5nA | ||
| TF252TH-4A-TL-H | NCH J-FET | Rochester Electronics, LLC | 3-SMD, Flat Lead | 100mW | Surface Mount | VTFP | N-Channel | 3.1pF @ 2V | 140µA @ 2V | 100mV @ 1µA | ||||
| TF410-TL-HX | N-CHANNEL SILICON JUNCTION FET | Rochester Electronics, LLC |
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