Semiconductors, Transistors, Transistors - JFETs Fairchild Semiconductor max power 625mW

Found: 4
  • SMALL SIGNAL N-CHANNEL MOSFET
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
    • Power - Max: 625mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
    • Resistance - RDS(On): 30 Ohms
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  • SMALL SIGNAL N-CHANNEL MOSFET
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 625mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
    • Voltage - Cutoff (VGS off) @ Id: 5V @ 1nA
    • Resistance - RDS(On): 30 Ohms
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  • SMALL SIGNAL N-CHANNEL MOSFET
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 625mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
    • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
    • Resistance - RDS(On): 50 Ohms
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  • SMALL SIGNAL N-CHANNEL MOSFET
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 625mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
    • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
    • Resistance - RDS(On): 80 Ohms
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