Semiconductors, Transistors, Transistors - JFETs IDSS(MAX) 63 A
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- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: UnitedSiC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
- Power - Max: 429W
- Voltage - Breakdown (V(BR)GSS): 1200V
- Current Drain (Id) - Max: 63 A
- Resistance - RDS(On): 45 mOhms
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